2-GHz Quasi-balanced-mode GaAs FET amplifier

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

1 Scopus Citations
View graph of relations

Author(s)

Related Research Unit(s)

Detail(s)

Original languageEnglish
Pages (from-to)573-577
Journal / PublicationMicrowave and Optical Technology Letters
Volume46
Issue number6
Publication statusPublished - 20 Sep 2005

Abstract

In this paper, a Quasi-Balanced mode GaAs FET amplifier is proposed, where a varactor diode is connected in parallel with the gate source of a GaAs FET, forcing it to operate in a quasi-balanced mode in order to compensate its input nonlinear gate-source capacitance. A 30-dB reduction for the first side-lobe was obtained at 1-dB g.c.p. by using optimal 2nd-harmonic terminations and a varactor diode. © 2005 Wiley Periodicals, Inc.

Research Area(s)

  • FET, Linearization, Nonlinear, Quasi-balanced

Citation Format(s)

2-GHz Quasi-balanced-mode GaAs FET amplifier. / Yu, Chi Sun; Chan, Wing Shing; Li, Chung Wai; Lo, Wai Keung; Chan, Shiu Hei.

In: Microwave and Optical Technology Letters, Vol. 46, No. 6, 20.09.2005, p. 573-577.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review