220-GHz-Band Broadband Power Amplifier Using GCPW-ML Structure

Yang Liu; Bo Zhang; Yong Fan; Yongxin Guo

doi:10.1109/iWEM53379.2021.9790670

220-GHz-Band Broadband Power Amplifier Using GCPW-ML Structure

Yang Liu
, Bo Zhang
, Yong Fan
, Yongxin Guo

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Abstract

In this paper, we proposed a 220-GHz power amplifier using 70-nm high electron mobility transistor (HEMT) process for beyond-5G wireless applications. The PA is composed of four-stage common-source (CS) transistors cascaded through grounded coplanar waveguide (GCPW) and microstrip line (ML) structures. According to the simulation results, the PA achieves an output 1 dB compression point (OP_1dB) of 11.1 dBm and saturated output power (P_sat) of 14.7 dBm at 210 GHz. The operating bandwidth is greater than 40 GHz. A peak small-signal gain of 27 dB is achieved and the input and output reflection coefficient are almost better than -10 dB from 190 GHz to 240 GHz. © 2021 IEEE.

Original language	English
Title of host publication	IEEE International Workshop on Electromagnetics: Applications and Student Innovation Competition (IEEE iWEM2021) - Proceedings
Publisher	IEEE
ISBN (Electronic)	978-1-6654-1828-7
ISBN (Print)	978-1-6654-1829-4
DOIs	https://doi.org/10.1109/iWEM53379.2021.9790670
Publication status	Published - Nov 2021
Externally published	Yes
Event	2021 IEEE International Workshop on Electromagnetics: Applications and Student Innovation Competition - Four Seasons Hotel, Guangzhou, China Duration: 28 Nov 2021 → 30 Nov 2021 http://www.em-conf.com/iwem2021/

Publication series

Name	IEEE International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM - Proceedings

Workshop

Workshop	2021 IEEE International Workshop on Electromagnetics: Applications and Student Innovation Competition
Abbreviated title	iWEM 2021
Place	China
City	Guangzhou
Period	28/11/21 → 30/11/21
Internet address	http://www.em-conf.com/iwem2021/

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10.1109/iWEM53379.2021.9790670

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Liu, Y., Zhang, B., Fan, Y., & Guo, Y. (2021). 220-GHz-Band Broadband Power Amplifier Using GCPW-ML Structure. In IEEE International Workshop on Electromagnetics: Applications and Student Innovation Competition (IEEE iWEM2021) - Proceedings (IEEE International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM - Proceedings). IEEE. https://doi.org/10.1109/iWEM53379.2021.9790670

@inproceedings{2926fefeda034733bcf748f2e8375b8f,

title = "220-GHz-Band Broadband Power Amplifier Using GCPW-ML Structure",

abstract = "In this paper, we proposed a 220-GHz power amplifier using 70-nm high electron mobility transistor (HEMT) process for beyond-5G wireless applications. The PA is composed of four-stage common-source (CS) transistors cascaded through grounded coplanar waveguide (GCPW) and microstrip line (ML) structures. According to the simulation results, the PA achieves an output 1 dB compression point (OP1dB) of 11.1 dBm and saturated output power (Psat) of 14.7 dBm at 210 GHz. The operating bandwidth is greater than 40 GHz. A peak small-signal gain of 27 dB is achieved and the input and output reflection coefficient are almost better than -10 dB from 190 GHz to 240 GHz. {\textcopyright} 2021 IEEE.",

author = "Yang Liu and Bo Zhang and Yong Fan and Yongxin Guo",

year = "2021",

month = nov,

doi = "10.1109/iWEM53379.2021.9790670",

language = "English",

isbn = "978-1-6654-1829-4",

series = "IEEE International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM - Proceedings",

publisher = "IEEE",

booktitle = "IEEE International Workshop on Electromagnetics: Applications and Student Innovation Competition (IEEE iWEM2021) - Proceedings",

address = "United States",

note = "2021 IEEE International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM 2021 ; Conference date: 28-11-2021 Through 30-11-2021",

url = "http://www.em-conf.com/iwem2021/",

}

Liu, Y, Zhang, B, Fan, Y & Guo, Y 2021, 220-GHz-Band Broadband Power Amplifier Using GCPW-ML Structure. in IEEE International Workshop on Electromagnetics: Applications and Student Innovation Competition (IEEE iWEM2021) - Proceedings. IEEE International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM - Proceedings, IEEE, 2021 IEEE International Workshop on Electromagnetics: Applications and Student Innovation Competition, Guangzhou, China, 28/11/21. https://doi.org/10.1109/iWEM53379.2021.9790670

220-GHz-Band Broadband Power Amplifier Using GCPW-ML Structure. / Liu, Yang; Zhang, Bo; Fan, Yong et al.
IEEE International Workshop on Electromagnetics: Applications and Student Innovation Competition (IEEE iWEM2021) - Proceedings. IEEE, 2021. (IEEE International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM - Proceedings).

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - 220-GHz-Band Broadband Power Amplifier Using GCPW-ML Structure

AU - Liu, Yang

AU - Zhang, Bo

AU - Fan, Yong

AU - Guo, Yongxin

PY - 2021/11

Y1 - 2021/11

N2 - In this paper, we proposed a 220-GHz power amplifier using 70-nm high electron mobility transistor (HEMT) process for beyond-5G wireless applications. The PA is composed of four-stage common-source (CS) transistors cascaded through grounded coplanar waveguide (GCPW) and microstrip line (ML) structures. According to the simulation results, the PA achieves an output 1 dB compression point (OP1dB) of 11.1 dBm and saturated output power (Psat) of 14.7 dBm at 210 GHz. The operating bandwidth is greater than 40 GHz. A peak small-signal gain of 27 dB is achieved and the input and output reflection coefficient are almost better than -10 dB from 190 GHz to 240 GHz. © 2021 IEEE.

AB - In this paper, we proposed a 220-GHz power amplifier using 70-nm high electron mobility transistor (HEMT) process for beyond-5G wireless applications. The PA is composed of four-stage common-source (CS) transistors cascaded through grounded coplanar waveguide (GCPW) and microstrip line (ML) structures. According to the simulation results, the PA achieves an output 1 dB compression point (OP1dB) of 11.1 dBm and saturated output power (Psat) of 14.7 dBm at 210 GHz. The operating bandwidth is greater than 40 GHz. A peak small-signal gain of 27 dB is achieved and the input and output reflection coefficient are almost better than -10 dB from 190 GHz to 240 GHz. © 2021 IEEE.

UR - https://www.scopus.com/pages/publications/85132985421

UR - https://www.scopus.com/pages/publications/85132985421#tab=impact

U2 - 10.1109/iWEM53379.2021.9790670

DO - 10.1109/iWEM53379.2021.9790670

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 978-1-6654-1829-4

T3 - IEEE International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM - Proceedings

BT - IEEE International Workshop on Electromagnetics: Applications and Student Innovation Competition (IEEE iWEM2021) - Proceedings

PB - IEEE

T2 - 2021 IEEE International Workshop on Electromagnetics: Applications and Student Innovation Competition

Y2 - 28 November 2021 through 30 November 2021

ER -

Liu Y, Zhang B, Fan Y, Guo Y. 220-GHz-Band Broadband Power Amplifier Using GCPW-ML Structure. In IEEE International Workshop on Electromagnetics: Applications and Student Innovation Competition (IEEE iWEM2021) - Proceedings. IEEE. 2021. (IEEE International Workshop on Electromagnetics: Applications and Student Innovation Competition, iWEM - Proceedings). doi: 10.1109/iWEM53379.2021.9790670

220-GHz-Band Broadband Power Amplifier Using GCPW-ML Structure

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