2 GHz parallel diode linearized amplifier

Chi Sun Yu; Wing Shing Chan; Wing-Le Chan

doi:10.1002/(SICI)1098-2760(20000405)25:1<14::AID-MOP5>3.0.CO;2-X

2 GHz parallel diode linearized amplifier

Chi Sun Yu
, Wing Shing Chan
, Wing-Le Chan

Department of Electrical Engineering

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

4 Citations (Scopus)

Abstract

A linearizer at 2 GHz, using a parallel-configured diode connected directly to the base of a transistor, is shown to give a reduction of 10 dB in spectral regrowth for the first sidelobe. The method presented is suitable for bipolar junction transistors, and results in a compact circuit, suitable for miniaturization. © 2000 John Wiley & Sons, Inc.

Original language	English
Pages (from-to)	14-16
Journal	Microwave and Optical Technology Letters
Volume	25
Issue number	1
DOIs	https://doi.org/10.1002/(SICI)1098-2760(20000405)25:1<14::AID-MOP5>3.0.CO;2-X
Publication status	Published - 5 Apr 2000

Research Keywords

Amplifier linearization
Power amplifiers
Predistortion

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title = "2 GHz parallel diode linearized amplifier",

abstract = "A linearizer at 2 GHz, using a parallel-configured diode connected directly to the base of a transistor, is shown to give a reduction of 10 dB in spectral regrowth for the first sidelobe. The method presented is suitable for bipolar junction transistors, and results in a compact circuit, suitable for miniaturization. {\textcopyright} 2000 John Wiley \& Sons, Inc.",

keywords = "Amplifier linearization, Power amplifiers, Predistortion",

author = "Yu, \{Chi Sun\} and Chan, \{Wing Shing\} and Wing-Le Chan",

year = "2000",

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TY - JOUR

T1 - 2 GHz parallel diode linearized amplifier

AU - Yu, Chi Sun

AU - Chan, Wing Shing

AU - Chan, Wing-Le

PY - 2000/4/5

Y1 - 2000/4/5

N2 - A linearizer at 2 GHz, using a parallel-configured diode connected directly to the base of a transistor, is shown to give a reduction of 10 dB in spectral regrowth for the first sidelobe. The method presented is suitable for bipolar junction transistors, and results in a compact circuit, suitable for miniaturization. © 2000 John Wiley & Sons, Inc.

AB - A linearizer at 2 GHz, using a parallel-configured diode connected directly to the base of a transistor, is shown to give a reduction of 10 dB in spectral regrowth for the first sidelobe. The method presented is suitable for bipolar junction transistors, and results in a compact circuit, suitable for miniaturization. © 2000 John Wiley & Sons, Inc.

KW - Amplifier linearization

KW - Power amplifiers

KW - Predistortion

UR - https://www.scopus.com/pages/publications/0012615325

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0012615325&origin=recordpage

U2 - 10.1002/(SICI)1098-2760(20000405)25:1<14::AID-MOP5>3.0.CO;2-X

DO - 10.1002/(SICI)1098-2760(20000405)25:1<14::AID-MOP5>3.0.CO;2-X

M3 - RGC 21 - Publication in refereed journal

SN - 0895-2477

VL - 25

SP - 14

EP - 16

JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

IS - 1

ER -

2 GHz parallel diode linearized amplifier

Abstract

Research Keywords

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