2 GHz parallel diode linearized amplifier

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

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Author(s)

Related Research Unit(s)

Detail(s)

Original languageEnglish
Pages (from-to)14-16
Journal / PublicationMicrowave and Optical Technology Letters
Volume25
Issue number1
Publication statusPublished - 5 Apr 2000

Link(s)

DOI

DOI
Check@CityULib
Link to Scopus https://www.scopus.com/record/display.uri?eid=2-s2.0-0012615325&origin=recordpage
Permanent Link https://scholars.cityu.edu.hk/en/publications/publication(711bdb2e-14ef-482e-9061-99b266e0366f).html

Abstract

A linearizer at 2 GHz, using a parallel-configured diode connected directly to the base of a transistor, is shown to give a reduction of 10 dB in spectral regrowth for the first sidelobe. The method presented is suitable for bipolar junction transistors, and results in a compact circuit, suitable for miniaturization. © 2000 John Wiley & Sons, Inc.

Research Area(s)

  • Amplifier linearization, Power amplifiers, Predistortion

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Publication fingerprints text

100
John Wiley Engineering
100
Bipolar Transistor Engineering
100
Sidelobes Engineering
100
Spectral Regrowth Engineering
100
Amplifier Engineering
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Citation Format(s)

[ RIS ] [ BibTeX ]
2 GHz parallel diode linearized amplifier. / Yu, Chi Sun; Chan, Wing Shing; Chan, Wing-Le.
In: Microwave and Optical Technology Letters, Vol. 25, No. 1, 05.04.2000, p. 14-16.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review