1.3-1.5 μm electroluminescence from Schottky diodes made on Au-InAs/GaAs quantum-size heterostructures

N. V. Baidus; B. N. Zvonkov; P. B. Mokeeva; E. A. Uskova; S. V. Tikhov; M. I. Vasilevskiy; M. J M Gomes; S. A. Filonovich

doi:10.1088/0268-1242/19/4/154

1.3-1.5 μm electroluminescence from Schottky diodes made on Au-InAs/GaAs quantum-size heterostructures

N. V. Baidus, B. N. Zvonkov, P. B. Mokeeva, E. A. Uskova, S. V. Tikhov, M. I. Vasilevskiy, M. J M Gomes, S. A. Filonovich

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

13 Citations (Scopus)

Abstract

This communication reports the results of experimental studies of the electroluminescence (EL) of forward-biased Schottky barrier (SB) diodes fabricated on heterostructures where an InAs/GaAs quantum dot (QD) layer was placed in the space charge region. In order to reach a higher EL wavelength, the QD layer was overgrown by a thin combined GaAs/InGaAs cladding layer. The heterostructures with Au SBs were found to show pronounced EL originating from several confined exciton states in InAs QDs which is higher at 300 K than at low temperatures. It is shown that the EL wavelength can be tuned within the 1.3-1.57 μm range by changing the thickness and composition of the combined GaAs/InGaAs capping layer. We discuss possible mechanisms of the injection of holes needed for the radiative recombination in the QDs and possibilities of improving the EL quantum yield.

Original language	English
Journal	Semiconductor Science and Technology
Volume	19
Issue number	4 SPEC. ISS.
DOIs	https://doi.org/10.1088/0268-1242/19/4/154
Publication status	Published - Apr 2004
Externally published	Yes

Access Output

10.1088/0268-1242/19/4/154

Other Access Options

Check CityUHK Library

Permanent Link

Right click to copy link

Cite this

@article{b8dd3b9a899243058d32ef5cf1d88ece,

title = "1.3-1.5 μm electroluminescence from Schottky diodes made on Au-InAs/GaAs quantum-size heterostructures",

abstract = "This communication reports the results of experimental studies of the electroluminescence (EL) of forward-biased Schottky barrier (SB) diodes fabricated on heterostructures where an InAs/GaAs quantum dot (QD) layer was placed in the space charge region. In order to reach a higher EL wavelength, the QD layer was overgrown by a thin combined GaAs/InGaAs cladding layer. The heterostructures with Au SBs were found to show pronounced EL originating from several confined exciton states in InAs QDs which is higher at 300 K than at low temperatures. It is shown that the EL wavelength can be tuned within the 1.3-1.57 μm range by changing the thickness and composition of the combined GaAs/InGaAs capping layer. We discuss possible mechanisms of the injection of holes needed for the radiative recombination in the QDs and possibilities of improving the EL quantum yield.",

author = "Baidus, {N. V.} and Zvonkov, {B. N.} and Mokeeva, {P. B.} and Uskova, {E. A.} and Tikhov, {S. V.} and Vasilevskiy, {M. I.} and Gomes, {M. J M} and Filonovich, {S. A.}",

year = "2004",

month = apr,

doi = "10.1088/0268-1242/19/4/154",

language = "English",

volume = "19",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing",

number = "4 SPEC. ISS.",

}

TY - JOUR

T1 - 1.3-1.5 μm electroluminescence from Schottky diodes made on Au-InAs/GaAs quantum-size heterostructures

AU - Baidus, N. V.

AU - Zvonkov, B. N.

AU - Mokeeva, P. B.

AU - Uskova, E. A.

AU - Tikhov, S. V.

AU - Vasilevskiy, M. I.

AU - Gomes, M. J M

AU - Filonovich, S. A.

PY - 2004/4

Y1 - 2004/4

N2 - This communication reports the results of experimental studies of the electroluminescence (EL) of forward-biased Schottky barrier (SB) diodes fabricated on heterostructures where an InAs/GaAs quantum dot (QD) layer was placed in the space charge region. In order to reach a higher EL wavelength, the QD layer was overgrown by a thin combined GaAs/InGaAs cladding layer. The heterostructures with Au SBs were found to show pronounced EL originating from several confined exciton states in InAs QDs which is higher at 300 K than at low temperatures. It is shown that the EL wavelength can be tuned within the 1.3-1.57 μm range by changing the thickness and composition of the combined GaAs/InGaAs capping layer. We discuss possible mechanisms of the injection of holes needed for the radiative recombination in the QDs and possibilities of improving the EL quantum yield.

AB - This communication reports the results of experimental studies of the electroluminescence (EL) of forward-biased Schottky barrier (SB) diodes fabricated on heterostructures where an InAs/GaAs quantum dot (QD) layer was placed in the space charge region. In order to reach a higher EL wavelength, the QD layer was overgrown by a thin combined GaAs/InGaAs cladding layer. The heterostructures with Au SBs were found to show pronounced EL originating from several confined exciton states in InAs QDs which is higher at 300 K than at low temperatures. It is shown that the EL wavelength can be tuned within the 1.3-1.57 μm range by changing the thickness and composition of the combined GaAs/InGaAs capping layer. We discuss possible mechanisms of the injection of holes needed for the radiative recombination in the QDs and possibilities of improving the EL quantum yield.

UR - http://www.scopus.com/inward/record.url?scp=1942420193&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-1942420193&origin=recordpage

U2 - 10.1088/0268-1242/19/4/154

DO - 10.1088/0268-1242/19/4/154

M3 - RGC 21 - Publication in refereed journal

SN - 0268-1242

VL - 19

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 4 SPEC. ISS.

ER -

1.3-1.5 μm electroluminescence from Schottky diodes made on Au-InAs/GaAs quantum-size heterostructures

Abstract

Access Output

Other Access Options

Permanent Link

Other Files and Links

Fingerprint

Cite this