0.18μm CMOS dual-band low-noise amplifier for ZigBee development

K. Xuan; K. F. Tsang; W. C. Lee; S. C. Lee

doi:10.1049/el.2010.2448

0.18μm CMOS dual-band low-noise amplifier for ZigBee development

Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

Overview

12 Scopus Citations

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Author(s)

K. Xuan
K. F. Tsang
W. C. Lee
S. C. Lee

Detail(s)

Original language	English
Pages (from-to)	85-86
Journal / Publication	Electronics Letters
Volume	46
Issue number	1
Publication status	Published - 7 Jan 2010
Externally published	Yes

Link(s)

DOI	DOI https://doi.org/10.1049/el.2010.2448 Final Published version
	Check@CityULib
Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-76049092768&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(682f76e0-0b97-480c-b057-594b5b6f941e).html

Abstract

A fully integrated dual-band (868/915 MHz and 2.4 GHz) low-noise amplifier is designed using 0.18 m RFCMOS technology for ZigBee development. In both bands, achieved gains are better than 15 dB and the resulting noise figures are better than 2.0 dB. The input and the output reflections are measured to be better than 10 dB in both bands. By tuning varactors in input and output LC tanks, frequency drifts due to unexpected parasitics and process variations are easily compensated. The amplifier works at 1.2 V supply voltage with 10 mA current dissipation.