0.18μm CMOS dual-band low-noise amplifier for ZigBee development

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

Detail(s)

Original languageEnglish
Pages (from-to)85-86
Journal / PublicationElectronics Letters
Volume46
Issue number1
Publication statusPublished - 7 Jan 2010
Externally publishedYes

Abstract

A fully integrated dual-band (868/915 MHz and 2.4 GHz) low-noise amplifier is designed using 0.18 m RFCMOS technology for ZigBee development. In both bands, achieved gains are better than 15 dB and the resulting noise figures are better than 2.0 dB. The input and the output reflections are measured to be better than 10 dB in both bands. By tuning varactors in input and output LC tanks, frequency drifts due to unexpected parasitics and process variations are easily compensated. The amplifier works at 1.2 V supply voltage with 10 mA current dissipation.

Research Area(s)

  • CMOS dual-band low-noise amplifier, ZigBee development, input LC tanks

Citation Format(s)

0.18μm CMOS dual-band low-noise amplifier for ZigBee development. / Xuan, K.; Tsang, K. F.; Lee, W. C.; Lee, S. C.

In: Electronics Letters, Vol. 46, No. 1, 07.01.2010, p. 85-86.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review