超高真空电子束蒸发在多孔硅上外延单晶硅

Epitaxial silicon with high quality has been successfully grown on porous silicon by ultra-vacuum electron beam evaporator. The effect of porosity of porous silicon on epitaxy was also studied. High energy electron diffraction (HREED), cross-section transition electron microscopy (XTEM), atomic force microscopy (AFM), Rutherford backscattering and channeling spectroscopy (RBS/C) were used to analyze the quality of epitaxial layer. And spreading resistance probe (SRP) was also used to measure the electrical properties of samples. The results show that the epitaxial silicon on porous silicon, which was made in the electrolyte HF: ethanol = 1:1 at the current density 10 mA/cm² for 10 min without illumination, exhibits good quality.