Abstract
Electron Focused Electric Field Enhanced Glow Discharge Plasma Ion Implantation, a new ion implantation method, is presented in this paper. The base structure of the implanter is introduced. The electron-focused electric field is calculated by finite element methods. And as a example, the sulfur element is implanted into the Si wafer. The depth profile is obtained by XPS Method, and as a comparison, the results by using TRIM simulation are also given.
| Translated title of the contribution | Research on Electron Focused Electric Field Enhanced Glow Discharge Plasma Ion Implantation |
|---|---|
| Original language | Chinese (Simplified) |
| Title of host publication | 第十一次全国焊接会议论文集 |
| Publisher | 中国机械工科学会焊接学会 |
| Pages | 172-175 |
| Volume | 1 |
| Publication status | Published - May 2005 |
| Event | 第11届全国焊接学术会议 - 上海交通大学, 上海, China Duration: 26 May 2005 → 28 May 2005 http://www.china-weldnet.com/chinese/kuixun/kuaixun112.htm |
Conference
| Conference | 第11届全国焊接学术会议 |
|---|---|
| Place | China |
| City | 上海 |
| Period | 26/05/05 → 28/05/05 |
| Internet address |
Research Keywords
- 辉光等离子体
- 离子注入
- 电场
- Glow discharge plasma
- ion implantation
- electric field
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