形成 SIMOX 结构的 PIII 新技术的研究

A novel technique for SIMOX structure has been developed by using plasma immersion ion implantation (PIII). Some of the advantages are high ion flux, large area implantation, short implantation time and low costs compared to conventional ion implantation. In PIII, the silicon substrate is immersed in a high ion density plasma from which oxygen ions are implanted into the substrate by a high negative bias. The parameters of PIII were optimized and a 20 to 50nm thick buried oxide layer with a silicon overlayer thickness of 20 to 50nm was fabricated by PIII. The wafers were analyzed by using a variety of technique, including RBS and XTEM.