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不同靶材料的高功率脉冲磁控溅射放电行为

Translated title of the contribution: High power pulsed magnetron sputtering discharge behavior of various target materials
  • 吴忠振*
  • , 田修波
  • , 潘锋
  • , 付劲裕
  • , 朱剑豪
  • *Corresponding author for this work

    Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

    Abstract

    Great interesting is induced by high power pulsed magnetron sputtering (HPPMS) for its high ionization of the sputtered materials, while the complex discharge puts of its applications in industry. The HPPMS discharge behaviors of various materials with different sputtering yields (Cu, Cr, Mo, Ti, V and C) were studied. The discharges of all the materials show a phasic discharge characteristic of five continuous stages. However, the target voltage of the same discharge stage of the material increases firstly, and decreases then with the increase of the sputtering yields, exhibiting a missing of certain discharge stage. The statistics of the mean values, peaks and platforms of the target currents show that self-sputtering and stable platform happen easily to the materials with high sputtering yields which is suitable for the thin films deposition by HPPMS, whereas gas discharge is dominated in the discharge of the materials with low sputtering yields, which is difficult in the using of HPPMS. Additional, the target current is mainly contributed to the platform (metal discharge) to the materials with high sputtering yields and the peaks (gas discharge) to the materials with low sputtering yields, respectively.
    Translated title of the contributionHigh power pulsed magnetron sputtering discharge behavior of various target materials
    Original languageChinese (Simplified)
    Pages (from-to)1279-1284
    Journal金属学报
    Volume50
    Issue number10
    DOIs
    Publication statusPublished - Oct 2014

    Research Keywords

    • 高功率脉冲磁控溅射
    • 溅射产额
    • 靶电流
    • 靶电压
    • High power pulsed magnetron sputtering
    • Sputtering yield
    • Target current
    • Target voltage

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