Abstract
本文提出了一種新型的等離子體基離子注入方法——電子聚焦電場增強輝光等離子體離子注入，介紹了該方法的基本結構和基本原理，採用該方法，進行了硫元素的離子注入，採用X射線光電子能譜深度剝層分析的方法測量了注入硫的深度分佈，並採用TRIM 程序對注入結果進行了模擬對比分析。
| Translated title of the contribution | A New Method Ion Implantation—Enhanced Glow Discharge Plasma Ion Implantation (EGDPII) |
|---|---|
| Original language | Chinese (Simplified) |
| Title of host publication | 2006 全国荷电粒子源、粒子束学术会议论文集 |
| Pages | 110-113 |
| Publication status | Published - Oct 2006 |
| Event | 2006 全国荷电粒子源粒子束学术会议 Symposium on Charged Particle Sources and Beams - Wuhan, China Duration: 14 Oct 2006 → 19 Oct 2006 |
Conference
| Conference | 2006 全国荷电粒子源粒子束学术会议 Symposium on Charged Particle Sources and Beams |
|---|---|
| Place | China |
| City | Wuhan |
| Period | 14/10/06 → 19/10/06 |
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