Abstract
To test for the microscopic magnetic phase separation in the dilute magnetic semiconductor Ga1-xMnxAs sug-gested by low energy muon spin rotation measurements[1], we present a detailed analysis of the amplitudes of the 8Li β-detected nuclear magnetic resonance in an epitaxially grown thin film of x = 5.4% Mn doped GaAs on a semi-insulating GaAs substrate with magnetic transition temperature TC =72 K. The spectrum at 100 K corresponds to 73% of the full room temperature amplitude, and at 60 K to about 62%. The 11% loss of signal through the magnetic tran-sition is much smaller than that ∼ 50% found by low energy μSR[1], and may be entirely due to an amplitude change intrinsic to GaAs. This lack of evidence for phase separation is, however, consistent with the full volume fraction magnetism found by a second low energy μSR measurement on a different sample using weak transverse field[2].
Original language | English |
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Pages (from-to) | 174-177 |
Journal | Physics Procedia |
Volume | 30 |
DOIs | |
Publication status | Published - 2012 |
Externally published | Yes |
Event | 12th International Conference on Muon Spin Rotation, Relaxation and Resonance, muSR 2011 - Cancun, Mexico Duration: 16 May 2011 → 20 May 2011 http://www.sciencedirect.com/science/journal/18753892/30/supp/C (unknown) |
Research Keywords
- dilute magnetic semiconductors
- GaAs:Mn
- low energy muons
- thin films
Publisher's Copyright Statement
- This full text is made available under CC-BY-NC-ND 4.0. https://creativecommons.org/licenses/by-nc-nd/4.0/