High-Performance Flexible Broadband Photodetectors Based on All-Inorganic Perovskite Nanowires

Project: Research

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Description

At present, photodetectors have become an important component in modern optoelectronic systems. Despite significant recent progress has been achieved in various photodetector fabrication processes and technologies, the further detector development is still mostly focused on the performance under specific wavelength; however, the ability to respond to light over a broad spectral range on mechanically flexible platforms is essential to many applications in imaging, communication and spectroscopy, etc. The challenge is that there is always a lack of ideal materials with appropriate device structures having the capability to absorb broadband incident radiation with the good optoelectronic transfer efficiency. Recently, the advent of organic-inorganic hybrid perovskite (organohalide) nanomaterials has led to a major step forward in photovoltaics and pathed promising avenues for photodetection. Organohalide perovskites, in general, have been considered as superior light absorbing media and strong sensitizers in the entire visible to ultraviolet region with the absorption rate of light over 90 %, but the complexity of preparing organic components, air instability and incompatibility with conventional integrated circuit processes (e.g. lithography) are major bottlenecks for their practical deployment. As a result, there are still many issues and opportunities in the development and performance assessment of fully bendable, high-performance and broadband photodetectors based on perovskite nanomaterials. In this proposal, we will concentrate on the fabrication of all-inorganic air-stable cesium lead halide perovskite (CsPbX3; X = Cl, Br, I) nanowire parallel arrays as the photoactive channels as well as the development of perovskite-compatible lithography processes to achieve phototransistor devices on flexible plastics. The use of nanowire parallel arrayed films would enlarge the detector output signals and enhance their invariability and reliability. Also, as contrasted to typical perovskite photoconductor or photodiode structures, this unique phototransistor device configuration is employed to modulate carrier concentration of the device channels in order to significantly enhance the performance for broadband photodetection. In the end, we plan to build the large-scale phototransistor arrays and to assess their operation limits with the goal to establish a versatile, low-cost and powerful scheme to realize the fully flexible, high-performance and broadband image sensor arrays based on air-stable CsPbX3 perovskite nanowires for the detection of visible to ultraviolet region.

Detail(s)

Project number9042637
Grant typeGRF
StatusActive
Effective start/end date1/01/19 → …