High-performance II-VI Nanostructure-based Field-effect Transistors with High-k and Ultrathin Organic Gate Insulators

Group II-VI compounds are promising materials for advanced electronic and optoelectronic devices. The single-crystal nature of one-dimensional (1D) II-VI nanostructures together with their large surface-to-volume ratio and size confinement effects are expected to offer advantages over conventional II-VI films in device applications. Following the research team's recent success in synthesizing high-quality, semiconducting II-VI nanostructures, this project aims at the fabrication of high-performance II-VI nanostructure-based field-effect transistors (FETs) with high-k or ultrathin organic gate insulators instead of conventional silicon oxide. FETs have simple structures, but are basic elements in many modern devices such as integrated circuits, flat panel displays, and date storage. This projects consists of three parts: (1) construction of high-performance nano-FETs from the II-VI nanostructures by using high-k gate insulators, (2) fabrication of high-performance nano-FETs by using ultrathin organic gate insulators, and (3) exploiting the potential applications of nano-FETs in transparent and flexible electronics.