High Efficiency Power Amplifiers for 5G Mobile Radio
DescriptionProject objectives are to establish the design capability to use advanced GaN technology processing (100nm and 250nm) in high efficiency power amplifiers for use in 5G for both the sub 6Hz band and at mm-waves. The applicants have published and obtained patents on innovative high efficiency power amplifiers that will first be applied to the sub 6GHz 5G mobile radio frequency band. Initially, the basic circuit models will be constructed and fabricated. The measurements for verification is beneficial to get more accurate simulation model. After this, design at 30 GHz mm-wave band will be performed, manufactured and measured for verification. This methodology will significantly enhance the efficiency of mm-wave power amplifier which reaches the level of state-of-arts. Further works will then need to be done for the 40 GHz, 50 GHz and 70/80 GHz frequency bands.At present, Hong Kong only has the technology to design the power amplifier using GaN (250 nm) in the 4G frequency bands. In order to maintain and surpass this standing, technology in the 100nm GaN needs to be sought.Benefits to Hong Kong would be to introduce and improve its standing and competitiveness in the RF/microwave/mm-wave power amplifiers that are so pervasive in the wireless communications market.
|Effective start/end date||1/03/20 → …|