Doping of One-dimensional II-VI Nanostructures and Applications in Field-effect Transistors
- Wenjun ZHANG (Principal Investigator / Project Coordinator)Department of Materials Science and Engineering
- Jiansheng JIE (Co-Investigator)
- Shuit Tong LEE (Co-Investigator)
DescriptionThis project aims at the doping and application of group II-VI semiconductor nanostructures (nanowires and nanoribbons). Group II-VI materials are promising materials for advanced electronic and optoelectronic devices. The single-crystalline nature of II-VI nanostructures together with their large surface-to-volume ratio and size confinement effects are expected to offer advantages over conventional II-VI films in device applications.In this project, the field-effect transistor (FET) will be selected as a model device system because it is a basic element in many modern devices such as integrated circuits, flat panel displays, and date storage. FET is also a powerful tool to study the electrical properties of nanostructured materials. This project consists of three parts:synthesis of II-VI nanostructures with controlled transport properties;comprehensive characterization of the nanostructures synthesized; andfabrication and evaluation of the FETs based on these nanostructures.
|Effective start/end date||1/04/07 → 13/11/08|