Development of Sub-nanometer MOS Gate Dielectric Films Based on Rare Earth Metal Compounds
DescriptionThis project aims to develop a process for fabricating high-quality high-dielectric films with an equivalent-oxide-thickness (EOT) in the sub-nanometre range for future-generation complementary metal-oxide-semiconductor (CMOS) and dynamic random access memory (DRAM) technology applications. The primary focus will be on rare-earth metal-related silicates and aluminates prepared using either the atomic layer deposition (ALD) or the molecular beam epitaxy (MBE) method. The intrinsic material properties and electrical characteristics will be studied systematically to understand potentials, electrical properties, reliability, and constraints of these new dielectric films. The properties of dielectric/silicon, and dielectric/gate electrode interfaces which govern the reliability and various characteristics of devices, will also be studied. The results obtained in this work will benefit future generations of integrated circuit manufacturing by overcoming the ultimate constraint of the gate oxide thickness, improving the performance of existing devices and circuits, as well as opening up a wide range of novel applications of the new materials.
|Effective start/end date||1/10/07 → 2/03/11|