Design of FDD/TDD Dual Mode High Linearity and High Efficiency Power Amplifiers for Long Term Evolution (LTE) Multimedia Handset
- Kim Fung TSANG (Principal Investigator / Project Coordinator)Department of Electrical Engineering
- Wah-ching LEE (Co-Investigator)
DescriptionLTE is emerging as the leading technology for next-generation wireless broadband networks and lays the groundwork for 4G technologies. At 20MHz frequency band, it will deliver data rates up to 100 Mbps for downlink and 50 Mbps for uplink and improve network coverage and efficiency by using orthogonal frequency-division multiplexing (OFDM) transmission with multiple-input, multiple-output (MIMO) smart antenna technologies. This new standard will offer rural areas with functions and features that are non-existent today. To become Asia's world city, Hong Kong must contribute heavily into this new technology. Being the core component of any mobile communication platform, the RF power amplifier has primarily been designed and produced in Western countries. However, with the expertise and knowledge from our team, we propose to develop FDDITDD dual mode LTE handset power amplifier that covers 1900-1920MHz TDD band and 1920-1980MHz FDD band. To the best of our knowledge. such. development is the first of its kind in the market, which has great market potential and can greatly accelerate Hong Kong's wireless multimedia technology advancement.
|Effective start/end date||1/11/09 → 30/06/11|