Atomic Memristor based on Janus 2D Ferroelectric Semiconductors - RMGS

Description

Neuromorphic in-memory computing systems could overcome the energy inefficiency and throughput limitation of today’s von Neumann computing architecture. Among various materials, the emerging Janus two-dimensional (2D) layered semiconductors with intrinsic ferroelectricity are attractive for neuromorphic and memory devices because of their vertical scaling feature and high carrier mobility. Nevertheless, numerous unexplored phenomena and inconsistencies exist in the existing Janus 2D ferroelectric semiconductors, which need additional investigation for the subsequent development of high-performance neuromorphic devices. In this project, we plan to utilize Janus 2D semiconductors (e.g., S-Mo-Se and Se-Mo-Te) to build vertical atomic memristors (i.e., atomristors) to mimic the biological synapses, substantially reducing the corresponding device size, cost, and power consumption (< 1 fJ per synaptic event). Enabled by the strong ferroelectric effect, the resulting Janus 2D ferroelectric artificial synapses would precisely define their synaptic weight for emulating synaptic behaviors. These results could provide a new device concept to build neuromorphic nanoelectronics, showing bionic performance unreachable by other conventional materials.