Prof. Stella W. PANG (彭慧芝)

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Research Output

  1. 1984

  2. DRY ETCHING INDUCED DAMAGE IN Si AND GaAs

    Pang, S. W., Apr 1984, In: Solid State Technology. 27, 4, p. 249-256

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 71
    Check@CityULib

  3. EFFECTS OF ION SPECIES AND ADSORBED GAS ON DRY ETCHING INDUCED DAMAGE IN GaAs.

    Pang, S. W., Geis, M. W., Efremow, N. N. & Lincoln, G. A., Jan 1984, Proceedings Of The 1984 International Symposium On Electron, Ion, And Photon Beams, 29 May - 1 June 1984, Tarrytown, N.Y. Vol. 3. p. 398-401 (Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena; vol. 3).

    Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

    Scopus citations: 54
    Check@CityULib

  4. SURFACE CONTAMINATION INDUCED BY REACTIVE ION ETCHING IN CF//4 AND CHF//3.

    Pang, S. W., Mountain, R. W. & Rathman, D. D., 1984, In: Electrochemical Society Extended Abstracts. 84-1, p. 129-130

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 1
    Check@CityULib
  5. 1983

  6. EFFECTS OF DRY ETCHING ON GaAs.

    Pang, S. W., Lincoln, G. A., McCelland, R. W., DeGraff, P. D., Geis, M. W. & Piacentini, W. J., Oct 1983, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 1, 4, p. 1334-1337

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 102
    Check@CityULib

  7. LARGE AREA ION BEAM ASSISTED ETCHING OF GaAs WITH HIGH ETCH RATES AND CONTROLLED ANISOTROPY.

    Lincoln, G. A., Geis, M. W., Pang, S. & Efremow, N. N., Oct 1983, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 1, 4, p. 1043-1046

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 58
    Check@CityULib

  8. Damage induced in Si by ion milling or reactive ion etching

    Pang, S. W., Rathman, D. D., Silversmith, D. J., Mountain, R. W. & DeGraff, P. D., 1983, In: Journal of Applied Physics. 54, 6, p. 3272-3277

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 121
    Check@CityULib

  9. EFFECT OF CHAMBER CONFIGURATION AND BIAS VOLTAGE ON DAMAGE INDUCED IN Si BY REACTION ION ETCHING.

    Pang, S. W., Horwitz, C. M., Rathman, D. D., Cabral, S. M., Silversmith, D. J. & Mountain, R. W., 1983, In: Electrochemical Society Extended Abstracts. 83-1, p. 278-279

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 1
    Check@CityULib
  10. Published

    EFFECT OF CHAMBER CONFIGURATION AND BIAS VOLTAGE ON DAMAGE INDUCED IN Si BY REACTIVE ION ETCHING.

    Pang, S. W., Horwitz, C. M., Rathman, D. D., Cabral, S. M., Silversmith, D. J. & Mountain, R. W., 1983, Proceedings - The Electrochemical Society. Electrochemical Soc Inc, Vol. 83-10. p. 84-92

    Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

    Scopus citations: 7
    Check@CityULib

  11. Modification of Schottky Diode Characteristics in GaAs by Dry Etching

    Pang, S. W., Lincoln, G. A., Geis, M. W. & Vera, A., 1983, Proceedings of IEEE/Cornell Conference on High-Speed Semiconductor Devices and Circuits. Institute of Electrical and Electronics Engineers, Inc., p. 167-176

    Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

    Check@CityULib
  12. 1982

  13. Interface state generation in the Si-SiO2 system by photoinjecting electrons from an Al field plate

    Pang, S., Lyon, S. A. & Johnson, W. C., 1982, In: Applied Physics Letters. 40, 8, p. 709-711

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 28
    Check@CityULib

  14. Si DAMAGE INDUCED BY DRY ETCHING.

    Pang, S., Rathman, D. D., Silversmith, D. J., Mountain, R. W. & DeGraff, P. D., 1982, In: Electrochemical Society Extended Abstracts. 82-2, p. 289-290

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 1
    Check@CityULib
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