Prof. Paul Kim Ho CHU (朱劍豪)

Research Output

  1. 1987
  2. The SIMS MEASUREMENT OF NITROGEN IN NITROGEN-DOPED CZ-SILICON

    Hockett, R. S., Evans, C. A. & CHU, P. K., Sep 1987, Proceedings of the Sixth International Conference on Secondary Ion Mass Spectrometry (SIMS VI). Benninghoven, A., Huber, A. M. & Werner, H. W. (eds.). John Wiley & Sons

    Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)peer-review

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  3. Application of glow discharge mass spectrometry and sputtered neutral mass spectrometry to materials characterization

    Chu, P. K., Huneke, J. C. & Blattner, R. J., May 1987, In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 5, 3, p. 295-301

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

    Scopus citations: 23
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  4. Profile studies of MeV ions implanted into Si

    Wong, H., Deng, E., Cheung, N. W., Chu, P. K., Strathman, E. M. & Strathman, M. D., 1987, In: Nuclear Inst. and Methods in Physics Research, B. 21, 1-4, p. 447-451

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

    Scopus citations: 46
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  5. Silicided shallow junction formation by ion implantation of impurity ions into silicide layers and subsequent drive-in

    Kwong, D. L., Ku, Y. H., Lee, S. K., Louis, E., Alvi, N. S. & Chu, P., 1987, In: Journal of Applied Physics. 61, 11, p. 5084-5088

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

    Scopus citations: 53
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  6. 1986
  7. ANALYSIS OF PSG AND BPSG BY BULK AND DEPTH PROFILING METHODS

    CHU, P. K. & KLADNIK, G. A., Oct 1986, The Proceedings of the International Conference on Semiconductor and Integrated Circuit Technology. Wang, X. & Mo, B. (eds.). World Scientific , p. 715-722

    Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)peer-review

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  8. SIMS Measurement of Na

    Hockett, R. S., Chu, P. K. & Bleiler, R. J., Jun 1986.

    Research output: Conference Papers (RGC: 31A, 31B, 32, 33)32_Refereed conference paper (no ISBN/ISSN)peer-review

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  9. A NOVEL SILICIDED SHALLOW JUNCTION TECHNOLOGY FOR CMOS VLSI

    KWONG, D. L., KU, Y. H., LEE, S. K., ALVI, N. S., CHU, P., ZHOU, Y. & WHITE, J. M., Apr 1986, Proceedings of MRS Meetings: Symposium F – Materials Issues in Silicon Integrated Circuit Processing . Vol. 71. p. 379-385

    Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)peer-review

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  10. Atom and acceptor depth distributions for aluminum channeled in silicon as a function of ion energy and crystal orientation

    Wilson, R. G., Jamba, D. M., Chu, P. K., Hopkins, C. G. & Hitzman, C. J., 1986, In: Journal of Applied Physics. 60, 8, p. 2806-2809

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

    Scopus citations: 4
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  11. NOVEL SILICIDED SHALLOW JUNCTION TECHNOLOGY FOR CMOS VLSI.

    Kwong, D. L., Ku, Y. H., Lee, S. K., Alvi, N. S., Chu, P., Zhou, P. & White, J. M., 1986, Materials Research Society Symposia Proceedings. Materials Research Soc, Vol. 71. p. 379-385

    Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)peer-review

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  12. RAPID THERMAL ANNEALING OF SHALLOW DIFFUSED CONTACT REGIONS IN GaAs.

    Kepler, N. J., Cheung, N. W. & Chu, P. K., 1986, Materials Research Society Symposia Proceedings. Materials Research Soc, Vol. 52. p. 383-389

    Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)peer-review

    Scopus citations: 1
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  13. 1985
  14. DIRECT COMPARISON OF FTIR AND SIMS CALIBRATIONS FOR [O] IN SILICON

    CHU, P. K., HOCKETT, R. S. & WILSON, R. G., Dec 1985, Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon. p. 67-71 (Materials Research Society Symposium - Proceedings; vol. 59).

    Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)peer-review

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  15. DONOR CREATION DURING OXYGEN IMPLANTED BURIED OXIDE FORMATION

    DELFINO, M. & CHU, P. K., Dec 1985, Semiconductor-on-Insulator and Thin Film Transistor Technology . p. 245-250 (Materials Research Society Symposium - Proceedings; vol. 53).

    Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)peer-review

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  16. SIMS MEASUREMENTS OF OXYGEN IN HEAVILY-DOPED SILICON

    BLEILER, R. J., HOCKETT, R. S., CHU, P. & STRATHMAN, E., Dec 1985, Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon. 7 p. (Materials Research Society Symposium - Proceedings; vol. 59).

    Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)peer-review

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  17. Quantitative Determination of Boron and Phosphorus in Borophosphosilicate Glass by Secondary Ion Mass Spectrometry

    Chu, P. K. & Grube, S. L., May 1985, In: Analytical Chemistry. 57, 6, p. 1071-1074

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

    Scopus citations: 15
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  18. POST-SPUTTERING IONIZATION SECONDARY ION MASS SPECTROMETRY: GLOW DISCHARGE MASS SPECTROMETRY (GDMS) AND SECONDARY NEUTRALS MASS SPECTROMETRY (SNMS)

    CHU, P. K., 1985. 8 p.

    Research output: Conference Papers (RGC: 31A, 31B, 32, 33)32_Refereed conference paper (no ISBN/ISSN)peer-review

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  19. Rapid thermal annealing of dopants implanted into preamorphized silicon

    Seidel, T. E., Knoell, R., Poli, G., Schwartz, B., Stevie, F. A. & Chu, P., 1985, In: Journal of Applied Physics. 58, 2, p. 683-687

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

    Scopus citations: 29
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  20. 1983
  21. Quantitative Depth Profiling of B and P in Borophosphosilicate Glass

    CHU, P. K., 13 Nov 1983, Secondary Ion Mass Spectrometry SIMS IV: Proceedings of the Fourth International Conference. Benninghoven, A., Okano, J., Shimizu, R. & Werner, H. W. (eds.). p. 332-335 (Springer Series in Chemical Physics; vol. 36).

    Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)peer-review

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  22. 1982
  23. SECONDARY ION MASS SPECTROMETRIC IMAGE DEPTH PROFILE ANALYSIS OF THIN LAYERS.

    CHU, P. K., HARRIS, W. C. & MORRISON, G. H., Nov 1982, In: ANAL CHEM. V 54, N 13, p. 2208-2210

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

    Scopus citations: 10
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  24. SIMS STUDIES ON ANOMALOUS BEHAVIOR OF PHOSPHORUS AND OTHER IMPLANTS IN SILICON.

    CHU, P. K., ZHU, D. & MORRISON, G. H., 1982, In: RADIAT EFF. V 61, N 3-4, p. 201-205

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)22_Publication in policy or professional journal

    Scopus citations: 4
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  25. Solid-state standard addition method in secondary ion mass spectrometry for improvement of detection limits [4]

    Chu, P. K. & Morrison, G. H., 1982, In: Analytical Chemistry. 54, 12, p. 2111-2113

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)Letter

    Scopus citations: 3
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