Prof. HUANG Jing-Kai (黃敬凱)

Dr. Huang is equipped with professional experience in the nanofabrication of ultra-scaled electronic devices and strong research expertise in the scalable manufacture of low-dimensional materials for advanced electronics. Now, his research focuses on the emerging materials integration of 2D semiconductors, complex oxides (high-κ, memory), and porous coordination polymers (low-κ, sensor) toward the fabrication of future semiconductor technology nodes.

Dr. Huang received his BS in Electrophysics and MS in Photonics from National Chiao Tung University (NCTU) at Taiwan and completed PhD in Material Science and Engineering at the University of New South Wales (UNSW), Australia. Before completing his PhD, he performed R&D work in semiconductors at King Abdullah University of Science and Technology (KAUST, Saudi Arabia), Taiwan Semiconductor Manufacturing Company (TSMC), and National Nano Device Laboratories (Taiwan). 

• Nanotechnology
• Low-dimensional Materials
• Semiconductor Manufacturing

• 2019 “Scientia PhD scholar” UNSW.

• Apr 2022 - Dec 2022, Lecturer, University of New South Wales.
• Apr 2015 - Dec 2018, Research Specialist, King Abdullah University of Science and Technology.

Professional Activity

• Jan 2023 - Now, Guest Editor, Micromachines.
• Dec 2022 - Now, Visiting Fellow, University of New South Wales.
• May 2022 - Now, Associate Editor, Frontiers in Electronics.

• J.-K. Huang, J. Shi, J. Zhang, S. Li, “An electronic device and method of forming an electronic device” Australian Provisional application: 2021902514 and 2022900344 (2022).
• M.-Y. Li, J.-K. Huang, L.-J. Li, “Semiconductor device having a lateral semiconductor heterojunction and method” US Patent 1099845B2 (2021).