Prof. WONG Hei (王曦)

Research Output

  1. 1993
  2. Published

    Theoretical analysis of threshold voltage behaviors of N-channel JMOSFET

    Yip, K. L., Wong, H. & Cheng, Y. C., Nov 1993, In: Solid State Electronics. 36, 11, p. 1645-1649

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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  3. Published

    Modeling of hot-electron-induced characteristic degradations for n-channel MOSFETs

    Wong, H. & Cheng, Y. C., Oct 1993, In: Solid State Electronics. 36, 10, p. 1469-1475

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

    Scopus citations: 14
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  4. Published

    Chemistry of silicon oxide annealed in ammonia

    Wong, H., Yang, B. L. & Cheng, Y. C., Sep 1993, In: Applied Surface Science. 72, 1, p. 49-54

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

    Scopus citations: 34
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  5. Published

    Deep-depletion-layer impact-ionization-induced gate-oxide breakdown in thin-oxide n-MOSFETs

    Huang, M. Q., Lai, P. T., Ma, Z. J., Wong, H. & Cheng, Y. C., Aug 1993, In: Solid State Electronics. 36, 8, p. 1155-1160

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

    Scopus citations: 1
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  6. Published

    Generation of interface states at the silicon/oxide interface due to hot-electron injection

    Wong, H. & Cheng, Y. C., 1993, In: Journal of Applied Physics. 74, 12, p. 7364-7368

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

    Scopus citations: 35
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  7. 1992
  8. Published

    250 MHz nMOS relaxation oscillator with enhanced linear voltage-frequency characteristic and temperature stability

    Cheung, T. S., Wong, H. & Cheng, Y. C., 1 Jan 1992, In: Electronics Letters. 28, 20, p. 1917-1919

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

    Scopus citations: 1
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  9. Published

    Improvement of punchthrough-induced gate-oxide breakdown in n-channel metal-oxide-semiconductor field-effect transistors using rapid thermal nitridation

    Huang, M. Q., Lai, P. T., Ma, Z. J., Wong, H. & Cheng, Y. C., 1992, In: Applied Physics Letters. 61, 4, p. 453-455

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

    Scopus citations: 4
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  10. 1991
  11. Published

    New design of anodic oxidation reactor for high-quality gate oxide preparation

    Hung, T. F., Wong, H., Cheng, Y. C. & Pun, C. K., Dec 1991, In: Journal of the Electrochemical Society. 138, 12, p. 3747-3750

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

    Scopus citations: 18
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  12. Published

    Modeling of Low-Frequency Noise in Metal-Oxide-Semiconductor Field-Effect Transistor with Electron Trapping-Detrapping at Oxide-Silicon Interface

    Wong, H., Aug 1991, In: IEEE Transactions on Electron Devices. 38, 8, p. 1883-1888

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

    Scopus citations: 7
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  13. Published

    Electronic conduction mechanisms in thin oxynitride films

    Wong, H. & Cheng, Y. C., 15 Jul 1991, In: Journal of Applied Physics. 70, 2, p. 1078-1080

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

    Scopus citations: 43
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  14. Published

    Depopulation kinetics of electron traps in thin oxynitride films

    Wong, H., CHENG, Y. C., Yang, B. L. & Liu, B. Y., Apr 1991, PROCEEDINGS: International Conference on Thin Film Physics and Applications ('91 TFPA). Zhou, S. X. & Wang, Y. L. (eds.). SPIE-The International Society for Optical Engineering, Vol. part 2. p. 494-498 (Proceedings of SPIE - The International Society for Optical Engineering; vol. 1519).

    Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)peer-review

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  15. 1990
  16. On the nitridation-induced enhancement and degradation of MOSFET characteristics

    Wong, H. & Cheng, Y. C., Aug 1990, In: Solid State Electronics. 33, 8, p. 1107-1109

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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  17. Study of the Electronic Trap Distribution at the SiO2-Si Interface Utilizing the Low-Frequency Noise Measurement

    Wong, H. & Cheng, Y. C., Jul 1990, In: IEEE Transactions on Electron Devices. 37, 7, p. 1743-1749

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

    Scopus citations: 38
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  18. Gate dielectric-dependent flicker noise in metal-oxide-semiconductor transistors

    Wong, H. & Cheng, Y. C., 1990, In: Journal of Applied Physics. 67, 2, p. 863-867

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

    Scopus citations: 14
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  19. Instabilities of metal-oxide-semiconductor transistor with high-temperature annealing of its gate oxide in ammonia

    Wong, H. & Cheng, Y. C., 1990, In: Journal of Applied Physics. 67, 11, p. 7132-7138

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

    Scopus citations: 24
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  20. Surface-related low-frequency noise of sputtered copper film

    Wong, H., Cheng, Y. C. & Ruan, G., 1990, In: Journal of Applied Physics. 67, 1, p. 312-316

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

    Scopus citations: 9
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  21. 1989
  22. Temperature dependence of low-frequency noise in n-channel MOS transistors

    Wong, H. & Cheng, Y. C., Oct 1989, In: Applied Surface Science. 39, 1-4, p. 493-499

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

    Scopus citations: 4
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  23. 1988
  24. A new growth model of thin silicon oxide in dry oxygen

    Wong, H. & Cheng, Y. C., 1988, In: Journal of Applied Physics. 64, 2, p. 893-897

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

    Scopus citations: 9
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