Dr. WANG Haipeng (王海蓬)

Patents (CityUHK)

  1. 2025
  2. Published

    A Protocol For The Synthesis Of Bismuth Vanadate Double-Layer Homojunction Without Heteroatoms As Photoelectrode

    ZHANG, R. (Inventor) & WANG, H. (Inventor), 18 Feb 2025, Patent No. US12,227,856B2, Priority No. 18/174,036

    Research output: Patents, Agreements and AssignmentsRGC 51 - Patents (CityUHK)

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