Material Science
Silicon
100%
Oxide Compound
85%
Dielectric Material
62%
Film
59%
Oxynitride
31%
Transistor
29%
Density
25%
Hafnium
23%
Oxide Film
23%
Dielectric Films
22%
Annealing
21%
Silicon Nitride
21%
Surface (Surface Science)
19%
Photoluminescence
16%
Electronic Circuit
14%
Metal Oxide
12%
Lanthanum
12%
Capacitance
12%
Oxide Interface
11%
Charge Trapping
10%
X-Ray Photoelectron Spectroscopy
10%
Metal-Oxide-Semiconductor Field-Effect Transistor
9%
Capacitor
9%
Current Voltage Characteristics
9%
Ion Implantation
9%
Field Effect Transistor
9%
Aluminum
8%
Nitride Compound
8%
Thin Films
8%
Amorphous Silicon
8%
Oxide Semiconductor
8%
Nanowire
7%
Cerium Oxide
7%
Waveguide
7%
Nitriding
6%
Porous Silicon
6%
Thermal Stability
6%
Grain Boundary
6%
Photoemission Spectroscopy
6%
Silicate
6%
Materials Property
6%
Permittivity
6%
Electrical Resistivity
5%
Silicide
5%
Electrical Breakdown
5%
Nanoclusters
5%
Engineering
Gate Dielectric
37%
Dielectrics
28%
Tunnel Construction
21%
Silicon Oxide
17%
Metal-Oxide-Semiconductor Field-Effect Transistor
16%
Charge Pump
15%
Dielectric Films
15%
Gate Oxide
14%
Oxide Film
13%
Silicon Dioxide
12%
Nanometre
10%
Field-Effect Transistor
10%
Metal Oxide Semiconductor
9%
Oxide Thickness
8%
Ray Photoelectron Spectroscopy
8%
Polysilicon
8%
Interface Trap
8%
Band Gap
8%
Frequency Noise
8%
Experimental Result
8%
Si Interface
8%
Nanowire
7%
Nanoscale
7%
Gate Length
7%
Nitride
7%
Electric Field
7%
Switched Capacitor
7%
Field Emission
7%
Energy Dissipation
6%
Porosity
6%
Magnetic Field
6%
Charge Pump Circuits
6%
Atomic Layer Deposition
5%
Microelectronics
5%
Hot Electron
5%
Analytical Model
5%
Electronic State
5%
Barrier Height
5%
Breakdown Voltage
5%
Electrostatic Discharge
5%
Rapid Thermal Annealing
5%
Temperature Dependence
5%
Current-Voltage Characteristic
5%
Nodes
5%