Dr. TAN Chaoliang (譚超良)

Visiting address
Phone: +852 34429405

Author IDs

Willing to take PhD students: yes


Dr. Tan is an Assistant Professor in the Department of Electrical Engineering at City University of Hong Kong. He received his PhD degree in Materials Science from Nanyang Technological University (Singapore) in 2016. After working as a Research Fellow in the same place for about one year, then he worked as a Postdoc Research Fellow in Department of Electrical Engineering and Computer Sciences at University of California, Berkeley for two years. His current research interests mainly focus on the following three directions at CityU: (1) Growth of 2D tellurium-based materials (e.g., nanoflakes, thin films and their Van der Waals heterostructures) for electronics (transistors, circuits, memory devices and synaptic transistors) and optoelectronics (e.g., photodetectors and imaging sensor systems). (2) Structural engineering (e.g., defect, phase, interlayer distance, etc.) of layered nanomaterials (e.g., TMDs, layered metal oxides and LDHs) for biomedical applications (e.g., cancer therapy and antibacterial). (3) Fabrication of 2D material-based flexible energy and sensing devices and their integrated wearable self-powered sensing systems. He had also worked on the preparation and applications of novel 2D materials and their functional composites. He has authored or co-authored over 130 SCI papers. More than 50 of them are first author or corresponding author papers, including Nat. Nanotechnol.Nat. Rev. Mater.Chem. Rev.Chem. Soc. Rev.Nat. Commun.J. Am. Chem. Soc.Angew. Chem. Int. Ed.Adv. Mater.ACS NanoAdv. Funct. Mater. and Small. The total citation of his published papers is over 21,000 with a H-index of 64. He has been listed as the "Highly Cited Researcher" (top 1%; by Clarivate Analytics) in last four years (2018-2021) as well as “Top 2% Scientists in the world” in Engineering by Stanford Unviersity in last two years (2020 and 2021). He also received the NSFC Excellent Young Scientist Fund (HK & Macau) in 2021.