Solid-State Electronics

Solid-State Electronics

ISSNs: 0038-1101

Additional searchable ISSN (Electronic): 1879-2405

Pergamon Press, United Kingdom

Scopus rating (2021): CiteScore 3

Journal

Journal Metrics

Research Output

  1. 2017
  2. Published

    Analytical modeling on the drain current characteristics of gate-all-around TFET with the incorporation of short-channel effects

    Xu, W., Wong, H., Iwai, H., Liu, J. & Qin, P., Dec 2017, In: Solid-State Electronics. 138, p. 24-29

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

    Scopus citations: 3
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  3. Published

    Geometry and temperature effects on the threshold voltage characteristics of silicon nanowire MOS transistors

    Wong, H., Yu, Q., Dong, S., Kakushima, K. & Iwai, H., Dec 2017, In: Solid-State Electronics. 138, p. 35-39

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

    Scopus citations: 3
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  4. Published

    Review on peculiar issues of field emission in vacuum nanoelectronic devices

    Filip, V., Filip, L. D. & Wong, H., Dec 2017, In: Solid-State Electronics. 138, p. 3-15

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

    Scopus citations: 11
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  5. Published

    28 nm CMOS process ESD protection based on diode-triggered silicon controlled rectifier

    Li, X., Dong, S., Jin, H., Miao, M., Hu, T., Guo, W. & Wong, H., Nov 2017, In: Solid-State Electronics. 137, p. 128-133

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

    Scopus citations: 5
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  6. 2016
  7. Published

    Layout optimization of GGISCR structure for on-chip system level ESD protection applications

    Zeng, J., Dong, S., Wong, H., Hu, T. & Li, X., 1 Dec 2016, In: Solid-State Electronics. 126, p. 152-157

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

    Scopus citations: 1
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  8. 2015
  9. Published

    Analytical model of drain current of cylindrical surrounding gate p-n-i-n TFET

    Xu, W., Wong, H. & Iwai, H., Sep 2015, In: Solid-State Electronics. 111, 9, p. 171-179

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

    Scopus citations: 25
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  10. 2009
  11. Published

    Effects of nitrogen incorporation into lanthana film by plasma immersion ion implantation

    Sen, B., Wong, H., Yang, B. L., Chu, P. K., Kakushima, K. & Iwai, H., Mar 2009, In: Solid-State Electronics. 53, 3, p. 355-358

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

    Scopus citations: 2
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  12. 2007
  13. Published

    Trapping characteristics of lanthanum oxide gate dielectric film explored from temperature dependent current-voltage and capacitance-voltage measurements

    Sen, B., Wong, H., Molina, J., Iwai, H., Ng, J. A., Kakushima, K. & Sarkar, C. K., Mar 2007, In: Solid-State Electronics. 51, 3, p. 475-480

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

    Scopus citations: 41
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  14. 2006
  15. Published

    Electron mobility of rare earth complexes measured by transient electroluminescence method

    Zang, F. X., Lengyel, O., Li, W., Hong, Z. R., Liu, Z., Lee, C. S. & Lee, S. T., Sep 2006, In: Solid-State Electronics. 50, 9-10, p. 1584-1587

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

    Scopus citations: 3
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  16. Published

    Characterization of oxide charge trapping in ultrathin N2O oxide using direct tunneling current

    Wong, H., Wong, C. K., Fu, Y. & Liou, J. J., Feb 2006, In: Solid-State Electronics. 50, 2, p. 170-176

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

    Scopus citations: 1
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  17. Published

    Electrical characteristics of high-κ dielectric film grown by direct sputtering method

    Sen, B., Sarkar, C. K., Wong, H., Chan, M. & Kok, C. W., Feb 2006, In: Solid-State Electronics. 50, 2, p. 237-240

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

    Scopus citations: 17
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  18. 2005
  19. Published

    Substrate current, gate current and lifetime prediction of deep-submicron nMOS devices

    Cui, Z., Liou, J. J., Yue, Y. & Wong, H., Mar 2005, In: Solid-State Electronics. 49, 3, p. 505-511

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

    Scopus citations: 11
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  20. 1999
  21. Published

    Reply to comment on `Modelling of trap-assisted electronic conduction in thin thermally nitrided oxide films' by P. Pipinys and V. Lapeika

    Wong, H., 1999, In: Solid-State Electronics. 43, 10, p. 1967-1968

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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  22. 1996
  23. Published

    Modelling of trap-assisted electronic conduction in thin thermally nitrided oxide films

    Yang, B. L., Wong, H. & Cheng, Y. C., Mar 1996, In: Solid-State Electronics. 39, 3, p. 385-390

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

    Scopus citations: 15
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  24. 1995
  25. Published

    Study of shallow bulk traps in thin nitrided oxide films by thermal re-emission of electrons trapped at high field

    Yang, B. L., Wong, H. & Cheng, Y. C., Nov 1995, In: Solid State Electronics. 38, 11, p. 1887-1891

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

    Scopus citations: 8
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  26. 1994
  27. Published

    Study of process-dependent electron-trapping characteristics of thin nitrided oxides

    Yang, B. L., Wong, H. & Cheng, Y. C., Mar 1994, In: Solid State Electronics. 37, 3, p. 481-486

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

    Scopus citations: 30
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  28. 1993
  29. Published

    Theoretical analysis of threshold voltage behaviors of N-channel JMOSFET

    Yip, K. L., Wong, H. & Cheng, Y. C., Nov 1993, In: Solid State Electronics. 36, 11, p. 1645-1649

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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  30. Published

    Modeling of hot-electron-induced characteristic degradations for n-channel MOSFETs

    Wong, H. & Cheng, Y. C., Oct 1993, In: Solid State Electronics. 36, 10, p. 1469-1475

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

    Scopus citations: 14
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  31. Published

    Deep-depletion-layer impact-ionization-induced gate-oxide breakdown in thin-oxide n-MOSFETs

    Huang, M. Q., Lai, P. T., Ma, Z. J., Wong, H. & Cheng, Y. C., Aug 1993, In: Solid State Electronics. 36, 8, p. 1155-1160

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

    Scopus citations: 1
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  32. 1990
  33. On the nitridation-induced enhancement and degradation of MOSFET characteristics

    Wong, H. & Cheng, Y. C., Aug 1990, In: Solid State Electronics. 33, 8, p. 1107-1109

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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