Microelectronics and Reliability

Microelectronics and Reliability

ISSNs: 0026-2714

Additional searchable ISSN (Electronic): 1872-941X

PERGAMON-ELSEVIER SCIENCE LTD, United Kingdom

Scopus rating (2018): CiteScore 1.7 SJR 0.376 SNIP 0.983

Journal

Journal Metrics
1 - 20 out of 116Page size: 20

Research Output

  1. 2019
  2. Published

    Effect of alternating current (AC) stressing on the microstructure and mechanical properties of low-silver content solder interconnect

    Zhu, Z., Chan, Y. & Wu, F., Jan 2019, In : Microelectronics Reliability. 92, p. 12-19

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › Not applicable › peer-review

    Scopus citations: 2
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  3. 2018
  4. Published

    Failure mechanisms of solder interconnects under current stressing in advanced electronic packages: An update on the effect of alternating current (AC) stressing

    Zhu, Z., Chan, Y. & Wu, F., Dec 2018, In : Microelectronics Reliability. 91, p. 179-182

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › Not applicable › peer-review

    Scopus citations: 1
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  5. Published

    Statistical nature of hard breakdown recovery in high-κ dielectric stacks studied using ramped voltage stress

    Feng, X., Raghavan, N., Mei, S., Dong, S., Pey, K. & Wong, H., Sep 2018, In : Microelectronics Reliability. 88-90, p. 164-168

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › Not applicable › peer-review

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  6. Published

    A double snapback SCR ESD protection scheme for 28 nm CMOS process

    Hu, T., Dong, S., Jin, H., Wong, H., Xu, Z., Li, X. & Liou, J. J., May 2018, In : Microelectronics Reliability. 84, p. 20-25

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › Not applicable › peer-review

    Scopus citations: 1
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  7. 2017
  8. Published

    Battery remaining useful life prediction at different discharge rates

    Wang, D., Yang, F., Zhao, Y. & Tsui, K., Nov 2017, In : Microelectronics Reliability. 78, p. 212-219

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › Not applicable › peer-review

    Scopus citations: 13
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  9. Published

    Effect of ENEPIG metallization for solid-state gold-gold diffusion bonds

    Pun, K. P. L., Dhaka, N. S., Cheung, C. & Chan, A. H. S., Nov 2017, In : Microelectronics Reliability. 78, p. 339-348

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › Not applicable › peer-review

    Scopus citations: 4
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  10. Published

    Prognostics of Lithium-ion batteries based on state space modeling with heterogeneous noise variance

    Wang, D., Yang, F., Zhao, Y. & Tsui, K. L., Aug 2017, In : Microelectronics Reliability. p. 1-8

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › Not applicable › peer-review

    Scopus citations: 8
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  11. Published

    Prognostics of Li(NiMnCo)O2-based lithium-ion batteries using a novel battery degradation model

    Yang, F., Wang, D., Xing, Y. & Tsui, K., Mar 2017, In : Microelectronics Reliability. 70, p. 70-78

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › Not applicable › peer-review

    Scopus citations: 24
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  12. 2016
  13. Published

    Editorial

    Asenov, A., Schichtmann, U., Tan, C. M., Wong, H. & Zhou, X., 1 Jun 2016, In : Microelectronics Reliability. 61, p. 1-2

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › Editorial Preface › Not applicable

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  14. Effects of thermal annealing on the charge localization characteristics of HfO2/Au/HfO2 stack

    Feng, X., Dong, S., Wong, H., Yu, D., Pey, K. L., Shubhakar, K. & Lau, W. S., Jun 2016, In : Microelectronics Reliability. 61, p. 78-81

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › Not applicable › peer-review

    Scopus citations: 2
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  15. Published

    Simulation and evaluation of the peak temperature in LED light bulb heatsink

    Sun, L., Zhu, J. & Wong, H., Jun 2016, In : Microelectronics Reliability. 61, p. 140-144

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › Not applicable › peer-review

    Scopus citations: 7
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  16. The variation of the leakage current characteristics of W/Ta2O5/W MIM capacitors with the thickness of the bottom W electrode

    Yu, D., Lau, W., Wong, H., Feng, X., Dong, S. & Pey, K., Jun 2016, In : Microelectronics Reliability. 61, p. 95-98

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › Not applicable › peer-review

    Scopus citations: 3
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  17. Published

    Comparative study of reliability degradation behaviors of LDMOS and LDMOS-SCR ESD protection devices

    Yu, Z., Jin, H., Dong, S., WONG, H., Zeng, J. & Wang, W., 2016, In : Microelectronics Reliability. 61, 6, p. 111-114

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › Not applicable › peer-review

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  18. 2015
  19. Published

    Effect of nano Al2O3 particles doping on electromigration and mechanical properties of Sn-58Bi solder joints

    Hu, T., Li, Y., Chan, Y. & Wu, F., Jul 2015, In : Microelectronics Reliability. 55, 8, p. 1226-1233 11538.

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › Not applicable › peer-review

    Scopus citations: 28
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  20. 2014

  21. Microstructure and shear strength of Sn37Pb/Cu solder joints subjected to isothermal aging

    Hu, X., Li, Y., Liu, Y., Liu, Y. & Min, Z., Aug 2014, In : Microelectronics Reliability. 54, 8, p. 1575-1582

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › Not applicable › peer-review

    Scopus citations: 30
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  22. Published

    On the current conduction mechanisms of CeO2/La 2O3 stacked gate dielectric

    Feng, X., Wong, H., Yang, B. L., Dong, S., Iwai, H. & Kakushima, K., Jun 2014, In : Microelectronics Reliability. 54, 6-7, p. 1133-1136

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › Not applicable › peer-review

    Scopus citations: 5
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  23. Published

    Snapback breakdown ESD device based on zener diodes on silicon-on-insulator technology

    Tam, W., Kok, C., Siu, S. & Wong, H., Jun 2014, In : Microelectronics Reliability. 54, 6-7, p. 1163-1168

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › Not applicable › peer-review

    Scopus citations: 6
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  24. Published

    Special section reliability and variability of devices for circuits and systems

    Asenov, A., Schlichtmann, U., Tan, C. M., Wong, H. & Zhou, X., Jun 2014, In : Microelectronics Reliability. 54, 6-7

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › Not applicable › peer-review

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  25. Temperature dependences of threshold voltage and drain-induced barrier lowering in 60 nm gate length MOS transistors

    Chen, Z., Wong, H., Han, Y., Dong, S. & Yang, B. L., Jun 2014, In : Microelectronics Reliability. 54, 6-7, p. 1109-1114

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › Not applicable › peer-review

    Scopus citations: 12
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  26. Published

    Thermal stability of sectorial split-drain magnetic field-effect transistors

    Tam, W., Kok, C., Siu, S., Tang, W., Leung, C. & Wong, H., Jun 2014, In : Microelectronics Reliability. 54, 6-7, p. 1115-1118

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › Not applicable › peer-review

    Scopus citations: 1
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