Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
Journal
Research Output
- 1999
Characterization of bending in single crystal Si beams and resonators
Weigold, J. W., Juan, W. H., Pang, S. W. & Borenstein, J. T., Jul 1999, In: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 17, 4, p. 1336-1340Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal
Scopus citations: 3- 1995
Atomic Force Microscopy Study of III-V Materials Etched Using and Electron Cyclotron Resonance Source
Pang, S. W. & Thomas III, S., Nov 1995, In: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 13, 6, p. 2350-2354Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Plasma passivation of etch‐induced surface damage on GaAs
Ko, K. K. & Pang, S. W., Nov 1995, In: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 13, 6, p. 2376-2380Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
- 1994
Evaluation of surface damage on GaAs etched with an electron cyclotron resonance source
Ko, K. K., Pang, S. W., Brock, T., Cole, M. W. & Casas, L. M., Nov 1994, In: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 12, 6, p. 3382-3387Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Dependence of Contact Resistivity and Schottky Diode Characteristics on Dry Etching Induced Damage of GaInAs
Thomas III, S. & Pang, S. W., Sept 1994, In: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 12, 5, p. 2941-2946Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
High Aspect Ratio Polyimide Etching Using an Oxygen Plasma Generated by Electron Cyclotron Resonance Source
Juan, W. H. & Pang, S. W., Jan 1994, In: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 12, 1, p. 422-426Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
- 1993
Controllable Layer by Layer Etching of GaAs with an Electron Cyclotron Resonance Source
Ko, K. K. & Pang, S. W., Nov 1993, In: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 11, 6, p. 2275-2279Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Effects of Reactive Ion Etching on Optical and Electro-Optical Properties of GaInAs/InP Based Strip-Loaded Waveguides
Thirstrup, C., Pang, S. W., Albrektsen, O. & Hanberg, J., Jul 1993, In: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 11, 4, p. 1214-1221Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
- 1992
Comparison Between Etching in Cl2 and BCl3 for Compound Semiconductors using Multipolar Electron Cyclotron Resonance Source
Pang, S. W. & Ko, K. K., Nov 1992, In: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 10, 6, p. 2703-2707Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Etching of Photoresist Using Oxygen Plasma Generated by a Multipolar Electron Cyclotron Resonance Source
Pang, S. W., Sung, K. T. & Ko, K. K., May 1992, In: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 10, 3, p. 1118-1123Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
- 1991
Etching of GaAs and InP Using a Hybrid Microwave and rf System
Pang, S. W., Liu, Y. & Sung, K. T., Nov 1991, In: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 9, p. 3530-3534Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
- 1990
Plasma‐deposited amorphous carbon films as planarization layers
Pang, S. W. & Horn, M. W., Nov 1990, In: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 8, 6, p. 1980-1984Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Plasma‐deposited organosilicon thin films as dry resists for deep ultraviolet lithography
Horn, M. W., Pang, S. W. & Rothschild, M., Nov 1990, In: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 8, 6, p. 1493-1496Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
- 1989
Aluminum Oxides As Imaging Materials For 193-nm Excimer Laser Lithography
Pang, S. W., Kunz, R. R., Rothschild, M., Goodman, R. B. & Horn, M. W., Nov 1989, In: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 7, 6, p. 1624-1628Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
- 1988
Dry Etching Induced Damage on Vertical Sidewalls of GaAs Channels
Pang, S. W., Goodhue, W. D., Lyszczarz, T. M., Ehrlich, D. J., Goodman, R. B. & Johnson, G. D., Nov 1988, In: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 6, 6, p. 1916-1920Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Emerging Technology for in situ processing: Patterning Alternatives
Ehrlich, D. J., Black, J. G., Rothschild, M. & Pang, S. W., May 1988, In: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 6, 3, p. 895Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review