Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

ISSNs: 0734-211X

American Institute of Physics Publising LLC, United States

Journal

Journal Metrics
61 - 62 out of 62Page size: 20

Research Output

  1. 1983

  2. EFFECTS OF DRY ETCHING ON GaAs.

    Pang, S. W., Lincoln, G. A., McCelland, R. W., DeGraff, P. D., Geis, M. W. & Piacentini, W. J., Oct 1983, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 1, 4, p. 1334-1337

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 102
    Check@CityULib

  3. LARGE AREA ION BEAM ASSISTED ETCHING OF GaAs WITH HIGH ETCH RATES AND CONTROLLED ANISOTROPY.

    Lincoln, G. A., Geis, M. W., Pang, S. & Efremow, N. N., Oct 1983, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 1, 4, p. 1043-1046

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 58
    Check@CityULib
Previous 1 2 3 4 Next