Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

ISSNs: 0734-211X

American Institute of Physics Publising LLC, United States

Journal

Journal Metrics
41 - 60 out of 62Page size: 20

Research Output

  1. 2002

  2. Reversal imprinting by transferring polymer from mold to substrate

    Huang, X. D., Bao, L. R., Cheng, X., Guo, L. J., Pang, S. W. & Yee, A. F., Nov 2002, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20, 6, p. 2872-2876

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 142
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  3. Published

    Enhancement of implantation efficiency by grid biasing in radio-frequency inductively coupled plasma direct-current plasma immersion ion implantation

    Tong, H., Fu, R. K. Y., Zeng, X., Kwok, D. T. K. & Chu, P. K., Jul 2002, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20, 4, p. 1452-1456

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 5
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  4. Freestanding microheaters in Si with high aspect ratio microstructures

    Tian, W. C. & Pang, S. W., May 2002, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20, 3, p. 1008-1012

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 15
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  5. 2001

  6. Self-aligned process for single electron transistors

    Berg, E. W. & Pang, S. W., Sept 2001, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19, 5, p. 1925-1930

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

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  7. Published

    Synthesis and microstructure of gallium phosphide nanowires

    Shi, W. S., Zheng, Y. F., Wang, N., Lee, C. S. & Lee, S. T., Jul 2001, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19, 4, p. 1115-1118

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 82
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  8. Published

    Exposure characteristics and three-dimensional profiling of SU8C resist using electron beam lithography

    Wong, W. H. & Pun, E. Y. B., May 2001, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19, 3, p. 732-735

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 37
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  9. Released submicrometer Si microstructures formed by one-step dry etching

    Tian, W. C. & Pang, S. W., Mar 2001, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19, 2, p. 433-438

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 7
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  10. Published

    Si nanowires synthesized from silicon monoxide by laser ablation

    Tang, Y. H., Zhang, Y. F., Wang, N., Shi, W. S., Lee, C. S., Bello, I. & Lee, S. T., Jan 2001, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19, 1, p. 317-319

    Research output: Journal Publications and Reviews › RGC 22 - Publication in policy or professional journal

    Scopus citations: 24
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  11. 2000

  12. Comparison of Cl2 and F-based dry etching for high aspect ratio Si microstructures etched with an inductively coupled plasma source

    Tian, W. -., Weigold, J. W. & Pang, S. W., Jul 2000, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18, 4, p. 1890-1896

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 60
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  13. 1999

  14. Cl2 plasma passivation of etch induced damage in GaAs and InGaAs with an inductively coupled plasma source

    Berg, E. W. & Pang, S. W., 1999, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 17, 6, p. 2745-2749

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 9
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  15. Published

    Process window and mechanism of surface property enhancement of 9Cr18 steel using plasma immersion ion implantation

    Zeng, Z. M., Tang, B. Y., Chu, P. K., Tian, X. B., Wang, S. Y. & Wang, X. F., 1999, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 17, 2, p. 851-854

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 11
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  16. Published

    Simulation of dose uniformity for different pulse durations during inner surface plasma immersion ion implantation

    Liu, A. G., Wang, X. F., Wang, S. Y., Tang, B. Y., Chu, P. K., Zeng, Z. M. & Tian, X. B., 1999, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 17, 2, p. 875-878

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 3
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  17. 1998

  18. Direct nano-printing on Al substrate using a SiC mold

    Pang, S. W., Tamamura, T., Nakao, M., Ozawa, A. & Masuda, H., May 1998, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16, 3, p. 1145-1149

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 104
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  19. Fabrication of self-aligned silicon field emission devices and effects of surface passivation on emission current

    Rakhshandehroo, M. R. & Pang, S. W., Mar 1998, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16, 2, p. 765-769

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 7
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  20. Published

    Characterization of III nitride materials and devices by secondary ion mass spectrometry

    Chu, P. K., Gao, Y. & Erickson, J. W., Jan 1998, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16, 1, p. 197-203

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 20
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  21. 1997

  22. Field emission from gated Si emitter tips with precise gate-tip spacing, gate diameter, tip sharpness, and tip protrusion

    Rakhshandehroo, M. R. & Pang, S. W., Nov 1997, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 15, 6, p. 2777-2781

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 9
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  23. Interfacial reaction behavior of Pt, Pd, and Ni on ZnSe

    Duxstad, K. J., Haller, E. E., Yu, K. M., Bourret, E. D., Lin, X. W., Ruvimov, S., Liliental-Weber, Z., & 1 othersWashburn, J., Jul 1997, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 15, 4, p. 891-898

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 6
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  24. 1995

  25. Fabrication of dry etched mirrors for In0.20Ga0.80As/GaAs waveguides using an electron cyclotron resonance source

    Ko, K. K., Kamath, K., Zia, O., Berg, E., Pang, S. W. & Bhattacharya, P., Nov 1995, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 13, 6, p. 2709-2713

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 5
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  26. In situ monitoring of GaAs etched with a Cl2/Ar discharge in an electron cyclotron resonance source

    Kahaian, D. J., Thomas III, S. & Pang, S. W., Mar 1995, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 13, 2, p. 253-257

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 10
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  27. 1986

  28. SUB-100-NM-WIDE, DEEP TRENCHES DEFINED BY REACTIVE ION ETCHING.

    Pang, S. W., Randall, J. N. & Geis, M. W., Jan 1986, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 4, 1, p. 341-344

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 7
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