Journal of Applied Physics

Journal of Applied Physics

ISSNs: 0021-8979

Additional searchable ISSN (electronic): 1089-7550

AMER INST PHYSICS, United States

Scopus rating (2023): CiteScore 5.4 SJR 0.649 SNIP 0.96

Journal

Journal Metrics

Research Output

  1. 1986
  2. Titanium-tungsten contacts to silicon. II. Stability against aluminum penetration

    Babcock, S. E. & Tu, K. N., 1986, In: Journal of Applied Physics. 59, 5, p. 1599-1605

    Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

    Scopus citations: 18
    Check@CityULib
  3. 1985
  4. Effects of substrate crystallinity and dopant on the growth kinetics of platinum silicides

    Takai, H., Psaras, P. A. & Tu, K. N., 1985, In: Journal of Applied Physics. 58, 11, p. 4165-4171

    Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

    Scopus citations: 21
    Check@CityULib
  5. Phase transformations of alloys on a reactive substrate: Interaction of binary alloys of transition and rare-earth metals with silicon

    Thompson, R. D., Tu, K. N. & Ottaviani, G., 1985, In: Journal of Applied Physics. 58, 2, p. 705-710

    Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

    Scopus citations: 26
    Check@CityULib
  6. Rapid thermal annealing of dopants implanted into preamorphized silicon

    Seidel, T. E., Knoell, R., Poli, G., Schwartz, B., Stevie, F. A. & Chu, P., 1985, In: Journal of Applied Physics. 58, 2, p. 683-687

    Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

    Scopus citations: 33
    Check@CityULib
  7. Room-temperature oxidation of Ni, Pd, and Pt silicides

    Cros, A., Pollak, R. A. & Tu, K. N., 1985, In: Journal of Applied Physics. 57, 6, p. 2253-2257

    Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

    Scopus citations: 20
    Check@CityULib
  8. Temperature dependence of semiconducting and structural properties of Cr-Si thin films

    Nava, F., Tien, T. & Tu, K. N., 1985, In: Journal of Applied Physics. 57, 6, p. 2018-2025

    Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

    Scopus citations: 77
    Check@CityULib
  9. Thermal stability of the Al/PdxW100-x/Si contact systems

    Eizenberg, M., Thompson, R. D. & Tu, K. N., 1985, In: Journal of Applied Physics. 58, 5, p. 1886-1892

    Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

    Scopus citations: 7
    Check@CityULib
  10. 1984
  11. Low-temperature redistribution of As in Si during Ni silicide formation

    Ohdomari, I., Akiyama, M., Maeda, T., Hori, M., Takebayashi, C., Ogura, A., Chikyo, T., & 3 othersKimura, I., Yoneda, K. & Tu, K. N., 1984, In: Journal of Applied Physics. 56, 10, p. 2725-2728

    Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

    Scopus citations: 37
    Check@CityULib
  12. Sequential silicide formation between vanadium and amorphous silicon thin-film bilayers

    Psaras, P. A., Eizenberg, M. & Tu, K. N., 1984, In: Journal of Applied Physics. 56, 12, p. 3439-3444

    Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

    Scopus citations: 13
    Check@CityULib
  13. Structure and growth kinetics of RhSi on single crystal, polycrystalline, and amorphous silicon substrates

    Psaras, P. A., Thompson, R. D., Herd, S. R. & Tu, K. N., 1984, In: Journal of Applied Physics. 55, 10, p. 3536-3543

    Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

    Scopus citations: 5
    Check@CityULib
  14. 1983
  15. Reduction of contact resistivity by As redistribution during Pd2Si formation

    Ohdomari, I., Hori, M., Maeda, T., Ogura, A., Kawarada, H., Hamamoto, T., Sano, K., & 4 othersTu, K. N., Wittmer, M., Kimura, I. & Yoneda, K., 1 Aug 1983, In: Journal of Applied Physics. 54, 8, p. 4679-4682

    Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

    Scopus citations: 14
    Check@CityULib
  16. Interaction between chromium oxide and chromium silicide

    Cros, A., Pollak, R. A. & Tu, K. N., 1 Jan 1983, In: Journal of Applied Physics. 54, 1, p. 258-259

    Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

    Scopus citations: 7
    Check@CityULib
  17. Analysis of parallel Schottky contacts by differential internal photoemission spectroscopy

    Okumura, T. & Tu, K. N., 1983, In: Journal of Applied Physics. 54, 2, p. 922-927

    Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

    Scopus citations: 47
    Check@CityULib
  18. Damage induced in Si by ion milling or reactive ion etching

    Pang, S. W., Rathman, D. D., Silversmith, D. J., Mountain, R. W. & DeGraff, P. D., 1983, In: Journal of Applied Physics. 54, 6, p. 3272-3277

    Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

    Scopus citations: 121
    Check@CityULib
  19. Interaction of Pd-Er alloys with silicon

    Ottaviani, G., Tu, K. N., Thompson, R. D., Mayer, J. W. & Lau, S. S., 1983, In: Journal of Applied Physics. 54, 8, p. 4614-4622

    Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

    Scopus citations: 17
    Check@CityULib
  20. Interdiffusion in copper-aluminum thin film bilayers. II. Analysis of marker motion during sequential compound formation

    Hentzell, H. T. G. & Tu, K. N., 1983, In: Journal of Applied Physics. 54, 12, p. 6929-6937

    Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

    Scopus citations: 33
    Check@CityULib
  21. Interdiffusion in copper-aluminum thin film bilayers. I. Structure and kinetics of sequential compound formation

    Hentzell, H. T. G., Thompson, R. D. & Tu, K. N., 1983, In: Journal of Applied Physics. 54, 12, p. 6923-6928

    Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

    Scopus citations: 56
    Check@CityULib
  22. Interfacial reaction and Schottky barrier between Pt and GaAs

    Fontaine, C., Okumura, T. & Tu, K. N., 1983, In: Journal of Applied Physics. 54, 3, p. 1404-1412

    Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

    Scopus citations: 80
    Check@CityULib
  23. Intermetallic compound formation in thin-film and in bulk samples of the Ni-Si binary system

    Tu, K. N., Ottaviani, G., Gösele, U. & Föll, H., 1983, In: Journal of Applied Physics. 54, 2, p. 758-763

    Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

    Scopus citations: 99
    Check@CityULib
  24. Redistribution of As during Pd2Si formation: Electrical measurements

    Wittmer, M., Ting, C. Y. & Tu, K. N., 1983, In: Journal of Applied Physics. 54, 2, p. 699-705

    Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

    Scopus citations: 26
    Check@CityULib