Journal of Applied Physics

Journal of Applied Physics

ISSNs: 0021-8979

Additional searchable ISSN (electronic): 1089-7550

AMER INST PHYSICS, United States

Scopus rating (2023): CiteScore 5.4 SJR 0.649 SNIP 0.96

Journal

Journal Metrics
581 - 600 out of 636Page size: 20

Research Output

  1. 1985

  2. Room-temperature oxidation of Ni, Pd, and Pt silicides

    Cros, A., Pollak, R. A. & Tu, K. N., 1985, In: Journal of Applied Physics. 57, 6, p. 2253-2257

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 20
    Check@CityULib

  3. Temperature dependence of semiconducting and structural properties of Cr-Si thin films

    Nava, F., Tien, T. & Tu, K. N., 1985, In: Journal of Applied Physics. 57, 6, p. 2018-2025

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 78
    Check@CityULib

  4. Thermal stability of the Al/PdxW100-x/Si contact systems

    Eizenberg, M., Thompson, R. D. & Tu, K. N., 1985, In: Journal of Applied Physics. 58, 5, p. 1886-1892

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 7
    Check@CityULib
  5. 1984

  6. Low-temperature redistribution of As in Si during Ni silicide formation

    Ohdomari, I., Akiyama, M., Maeda, T., Hori, M., Takebayashi, C., Ogura, A. & Chikyo, T. & 3 others, Kimura, I., Yoneda, K. & Tu, K. N., 1984, In: Journal of Applied Physics. 56, 10, p. 2725-2728

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 37
    Check@CityULib

  7. Sequential silicide formation between vanadium and amorphous silicon thin-film bilayers

    Psaras, P. A., Eizenberg, M. & Tu, K. N., 1984, In: Journal of Applied Physics. 56, 12, p. 3439-3444

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 14
    Check@CityULib

  8. Structure and growth kinetics of RhSi on single crystal, polycrystalline, and amorphous silicon substrates

    Psaras, P. A., Thompson, R. D., Herd, S. R. & Tu, K. N., 1984, In: Journal of Applied Physics. 55, 10, p. 3536-3543

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 5
    Check@CityULib
  9. 1983

  10. Reduction of contact resistivity by As redistribution during Pd2Si formation

    Ohdomari, I., Hori, M., Maeda, T., Ogura, A., Kawarada, H., Hamamoto, T. & Sano, K. & 4 others, Tu, K. N., Wittmer, M., Kimura, I. & Yoneda, K., 1 Aug 1983, In: Journal of Applied Physics. 54, 8, p. 4679-4682

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 14
    Check@CityULib

  11. Interaction between chromium oxide and chromium silicide

    Cros, A., Pollak, R. A. & Tu, K. N., 1 Jan 1983, In: Journal of Applied Physics. 54, 1, p. 258-259

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 7
    Check@CityULib

  12. Analysis of parallel Schottky contacts by differential internal photoemission spectroscopy

    Okumura, T. & Tu, K. N., 1983, In: Journal of Applied Physics. 54, 2, p. 922-927

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 47
    Check@CityULib

  13. Damage induced in Si by ion milling or reactive ion etching

    Pang, S. W., Rathman, D. D., Silversmith, D. J., Mountain, R. W. & DeGraff, P. D., 1983, In: Journal of Applied Physics. 54, 6, p. 3272-3277

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 121
    Check@CityULib

  14. Interaction of Pd-Er alloys with silicon

    Ottaviani, G., Tu, K. N., Thompson, R. D., Mayer, J. W. & Lau, S. S., 1983, In: Journal of Applied Physics. 54, 8, p. 4614-4622

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 17
    Check@CityULib

  15. Interdiffusion in copper-aluminum thin film bilayers. II. Analysis of marker motion during sequential compound formation

    Hentzell, H. T. G. & Tu, K. N., 1983, In: Journal of Applied Physics. 54, 12, p. 6929-6937

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 35
    Check@CityULib

  16. Interdiffusion in copper-aluminum thin film bilayers. I. Structure and kinetics of sequential compound formation

    Hentzell, H. T. G., Thompson, R. D. & Tu, K. N., 1983, In: Journal of Applied Physics. 54, 12, p. 6923-6928

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 57
    Check@CityULib

  17. Interfacial reaction and Schottky barrier between Pt and GaAs

    Fontaine, C., Okumura, T. & Tu, K. N., 1983, In: Journal of Applied Physics. 54, 3, p. 1404-1412

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 82
    Check@CityULib

  18. Intermetallic compound formation in thin-film and in bulk samples of the Ni-Si binary system

    Tu, K. N., Ottaviani, G., Gösele, U. & Föll, H., 1983, In: Journal of Applied Physics. 54, 2, p. 758-763

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 100
    Check@CityULib

  19. Redistribution of As during Pd2Si formation: Electrical measurements

    Wittmer, M., Ting, C. Y. & Tu, K. N., 1983, In: Journal of Applied Physics. 54, 2, p. 699-705

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 26
    Check@CityULib

  20. Temperature dependence of structural and electrical properties of Ta-Si thin alloy films

    Tien, T., Ottaviani, G. & Tu, K. N., 1983, In: Journal of Applied Physics. 54, 12, p. 7047-7057

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 30
    Check@CityULib
  21. 1982

  22. A simple analysis of inert marker motion in a single compound layer for solid-phase epitaxy and for binary diffusion couples

    Gösele, U., Tu, K. N. & Thompson, R. D., 1982, In: Journal of Applied Physics. 53, 12, p. 8759-8764

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 12
    Check@CityULib

  23. A study of vanadium as diffusion barrier between aluminum and gadolinium silicide contacts

    Eizenberg, M., Thompson, R. D. & Tu, K. N., 1982, In: Journal of Applied Physics. 53, 10, p. 6891-6897

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 31
    Check@CityULib

  24. Formation and Schottky behavior of manganese silicides on n-type silicon

    Eizenberg, M. & Tu, K. N., 1982, In: Journal of Applied Physics. 53, 10, p. 6885-6890

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 95
    Check@CityULib
Previous 1...26 27 28 29 30 31 32 Next