Journal of Applied Physics

Journal of Applied Physics

ISSNs: 0021-8979

Additional searchable ISSN (Electronic): 1089-7550

AMER INST PHYSICS, United States

Scopus rating (2021): CiteScore 4.7 SJR 0.668 SNIP 0.964

Journal

Journal Metrics
561 - 580 out of 615Page size: 20

Research Output

  1. 1985

  2. Thermal stability of the Al/PdxW100-x/Si contact systems

    Eizenberg, M., Thompson, R. D. & Tu, K. N., 1985, In: Journal of Applied Physics. 58, 5, p. 1886-1892

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

    Scopus citations: 7
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  3. 1984

  4. Low-temperature redistribution of As in Si during Ni silicide formation

    Ohdomari, I., Akiyama, M., Maeda, T., Hori, M., Takebayashi, C., Ogura, A., Chikyo, T., & 3 othersKimura, I., Yoneda, K. & Tu, K. N., 1984, In: Journal of Applied Physics. 56, 10, p. 2725-2728

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

    Scopus citations: 35
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  5. Sequential silicide formation between vanadium and amorphous silicon thin-film bilayers

    Psaras, P. A., Eizenberg, M. & Tu, K. N., 1984, In: Journal of Applied Physics. 56, 12, p. 3439-3444

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

    Scopus citations: 9
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  6. Structure and growth kinetics of RhSi on single crystal, polycrystalline, and amorphous silicon substrates

    Psaras, P. A., Thompson, R. D., Herd, S. R. & Tu, K. N., 1984, In: Journal of Applied Physics. 55, 10, p. 3536-3543

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

    Scopus citations: 5
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  7. 1983

  8. Reduction of contact resistivity by As redistribution during Pd2Si formation

    Ohdomari, I., Hori, M., Maeda, T., Ogura, A., Kawarada, H., Hamamoto, T., Sano, K., & 4 othersTu, K. N., Wittmer, M., Kimura, I. & Yoneda, K., 1 Aug 1983, In: Journal of Applied Physics. 54, 8, p. 4679-4682

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

    Scopus citations: 12
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  9. Interaction between chromium oxide and chromium silicide

    Cros, A., Pollak, R. A. & Tu, K. N., 1 Jan 1983, In: Journal of Applied Physics. 54, 1, p. 258-259

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

    Scopus citations: 6
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  10. Analysis of parallel Schottky contacts by differential internal photoemission spectroscopy

    Okumura, T. & Tu, K. N., 1983, In: Journal of Applied Physics. 54, 2, p. 922-927

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

    Scopus citations: 43
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  11. Damage induced in Si by ion milling or reactive ion etching

    Pang, S. W., Rathman, D. D., Silversmith, D. J., Mountain, R. W. & DeGraff, P. D., 1983, In: Journal of Applied Physics. 54, 6, p. 3272-3277

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

    Scopus citations: 109
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  12. Interaction of Pd-Er alloys with silicon

    Ottaviani, G., Tu, K. N., Thompson, R. D., Mayer, J. W. & Lau, S. S., 1983, In: Journal of Applied Physics. 54, 8, p. 4614-4622

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

    Scopus citations: 16
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  13. Interdiffusion in copper-aluminum thin film bilayers. II. Analysis of marker motion during sequential compound formation

    Hentzell, H. T. G. & Tu, K. N., 1983, In: Journal of Applied Physics. 54, 12, p. 6929-6937

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

    Scopus citations: 31
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  14. Interdiffusion in copper-aluminum thin film bilayers. I. Structure and kinetics of sequential compound formation

    Hentzell, H. T. G., Thompson, R. D. & Tu, K. N., 1983, In: Journal of Applied Physics. 54, 12, p. 6923-6928

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

    Scopus citations: 56
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  15. Interfacial reaction and Schottky barrier between Pt and GaAs

    Fontaine, C., Okumura, T. & Tu, K. N., 1983, In: Journal of Applied Physics. 54, 3, p. 1404-1412

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

    Scopus citations: 70
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  16. Intermetallic compound formation in thin-film and in bulk samples of the Ni-Si binary system

    Tu, K. N., Ottaviani, G., Gösele, U. & Föll, H., 1983, In: Journal of Applied Physics. 54, 2, p. 758-763

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

    Scopus citations: 99
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  17. Redistribution of As during Pd2Si formation: Electrical measurements

    Wittmer, M., Ting, C. Y. & Tu, K. N., 1983, In: Journal of Applied Physics. 54, 2, p. 699-705

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

    Scopus citations: 23
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  18. Temperature dependence of structural and electrical properties of Ta-Si thin alloy films

    Tien, T., Ottaviani, G. & Tu, K. N., 1983, In: Journal of Applied Physics. 54, 12, p. 7047-7057

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

    Scopus citations: 29
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  19. 1982

  20. A simple analysis of inert marker motion in a single compound layer for solid-phase epitaxy and for binary diffusion couples

    Gösele, U., Tu, K. N. & Thompson, R. D., 1982, In: Journal of Applied Physics. 53, 12, p. 8759-8764

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

    Scopus citations: 12
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  21. A study of vanadium as diffusion barrier between aluminum and gadolinium silicide contacts

    Eizenberg, M., Thompson, R. D. & Tu, K. N., 1982, In: Journal of Applied Physics. 53, 10, p. 6891-6897

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

    Scopus citations: 27
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  22. Formation and Schottky behavior of manganese silicides on n-type silicon

    Eizenberg, M. & Tu, K. N., 1982, In: Journal of Applied Physics. 53, 10, p. 6885-6890

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

    Scopus citations: 91
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  23. Formation of shallow silicide contacts of high Schottky barrier on Si: Alloying Pd and Pt with W versus alloying Pd and Pt with Si

    Eizenberg, M. & Tu, K. N., 1982, In: Journal of Applied Physics. 53, 3, p. 1577-1585

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

    Scopus citations: 41
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  24. Growth kinetics of planar binary diffusion couples: "Thin-film case" versus "bulk cases"

    Gösele, U. & Tu, K. N., 1982, In: Journal of Applied Physics. 53, 4, p. 3252-3260

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

    Scopus citations: 510
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