Journal of Applied Physics

Journal of Applied Physics

ISSNs: 0021-8979

Additional searchable ISSN (electronic): 1089-7550

AMER INST PHYSICS, United States

Scopus rating (2023): CiteScore 5.4 SJR 0.649 SNIP 0.96

Journal

Journal Metrics
541 - 560 out of 634Page size: 20

Research Output

  1. 1990

  2. Formation, oxidation, electronic, and electrical properties of copper silicides

    Cros, A., Aboelfotoh, M. O. & Tu, K. N., 1990, In: Journal of Applied Physics. 67, 7, p. 3328-3336

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 200
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  3. Gate dielectric-dependent flicker noise in metal-oxide-semiconductor transistors

    Wong, H. & Cheng, Y. C., 1990, In: Journal of Applied Physics. 67, 2, p. 863-867

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 16
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  4. Instabilities of metal-oxide-semiconductor transistor with high-temperature annealing of its gate oxide in ammonia

    Wong, H. & Cheng, Y. C., 1990, In: Journal of Applied Physics. 67, 11, p. 7132-7138

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 24
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  5. Kinetic description of the transition from a one-phase to a two-phase growth regime in Al/Pd lateral diffusion couples

    Blanpain, B., Mayer, J. W., Liu, J. C. & Tu, K. N., 1990, In: Journal of Applied Physics. 68, 7, p. 3259-3267

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 14
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  6. Surface-related low-frequency noise of sputtered copper film

    Wong, H., Cheng, Y. C. & Ruan, G., 1990, In: Journal of Applied Physics. 67, 1, p. 312-316

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 9
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  7. 1989

  8. The dynamics of free, straight dislocation pairs. II. Edge dislocations

    Eykholt, R. & Srolovitz, D. J., 1 Jun 1989, In: Journal of Applied Physics. 65, 11, p. 4204-4211

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 5
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  9. The dynamics of free, straight dislocation pairs. I. Screw dislocations

    Eykholt, R., Trugman, S. A. & Srolovitz, D. J., 1 Jun 1989, In: Journal of Applied Physics. 65, 11, p. 4198-4203

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 4
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  10. "Critical thickness" of amorphous phase formation in binary diffusion couples

    Gösele, U. & Tu, K. N., 1989, In: Journal of Applied Physics. 66, 6, p. 2619-2626

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 126
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  11. The characterization of high-frequency ultrasonic fields using a polarimetric optical fiber sensor

    Chan, H. L. W., Chiang, K. S., Price, D. C. & Gardner, J. L., 1989, In: Journal of Applied Physics. 66, 4, p. 1565-1570

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 22
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  12. 1988

  13. A new growth model of thin silicon oxide in dry oxygen

    Wong, H. & Cheng, Y. C., 1988, In: Journal of Applied Physics. 64, 2, p. 893-897

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 9
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  14. High-temperature annealing characteristics of tungsten and tungsten nitride Schottky contacts to GaAs under different annealing conditions

    Yu, K. M., Jaklevic, J. M., Haller, E. E., Cheung, S. K. & Kwok, S. P., 1988, In: Journal of Applied Physics. 64, 3, p. 1284-1291

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 27
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  15. Localized epitaxial growth of IrSi3 on (111) and (001) silicon

    Chu, J. J., Chen, L. J. & Tu, K. N., 1988, In: Journal of Applied Physics. 63, 4, p. 1163-1167

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 15
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  16. Secondary grain growth and formation of antiphase domains in ordered Cu3Au thin films

    Chou, T. C. & Tu, K. N., 1988, In: Journal of Applied Physics. 64, 5, p. 2375-2379

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 4
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  17. Thermal stability and electrical conduction behavior of coevaporated WSi2±x thin films

    Nava, F., Weiss, B. Z., Ahn, K. Y., Smith, D. A. & Tu, K. N., 1988, In: Journal of Applied Physics. 64, 1, p. 354-364

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 38
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  18. 1987

  19. Effect of a substrate on the phase transformations of amorphous TiSi2 thin films

    Thompson, R. D., Takai, H., Psaras, P. A. & Tu, K. N., 15 Jan 1987, In: Journal of Applied Physics. 61, 2, p. 540-544

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 52
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  20. A comparative study of phase stability and film morphology in thin-film M/GaAs systems (M=Co, Rh, Ir, Ni, Pd, and Pt)

    Sands, T., Keramidas, V. G., Yu, K. M., Washburn, J. & Krishnan, K., 1987, In: Journal of Applied Physics. 62, 5, p. 2070-2079

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 86
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  21. Correlation between solid-state reaction and electrical properties of the Rh/GaAs Schottky contact

    Yu, K. M., Cheung, S. K., Sands, T., Jaklevic, J. M. & Haller, E. E., 1987, In: Journal of Applied Physics. 61, 3, p. 1099-1102

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 14
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  22. Electrical characterization of Schottky contacts of Au, Al, Gd, and Pt on n-type and p-type GaAs

    Okumura, T. & Tu, K. N., 1987, In: Journal of Applied Physics. 61, 8, p. 2955-2961

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 39
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  23. Electrical transport properties of transition-metal disilicide films

    Nava, F., Tu, K. N., Mazzega, E., Michelini, M. & Queirolo, G., 1987, In: Journal of Applied Physics. 61, 3, p. 1085-1093

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 70
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  24. Enhanced grain growth of polycrystalline silicon at low temperature by dopant redistribution

    Chou, T. C., Wong, C. Y. & Tu, K. N., 1987, In: Journal of Applied Physics. 62, 7, p. 2722-2726

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 4
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