Journal of Applied Physics
Journal of Applied Physics
ISSNs: 0021-8979
Additional searchable ISSN (Electronic): 1089-7550
AMER INST PHYSICS, United States
Scopus rating (2022): CiteScore 5.1 SJR 0.706 SNIP 1.006
Journal
Research Output
- 1998
Stress relaxation and misfit dislocation nucleation in the growth of misfitting films: A molecular dynamics simulation study
Dong, L., Schnitker, J., Smith, R. W. & Srolovitz, D. J., 1 Jan 1998, In: Journal of Applied Physics. 83, 1, p. 217-227Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Scopus citations: 34- 1997
A kinetic Monte Carlo method for the atomic-scale simulation of chemical vapor deposition: Application to diamond
Battaile, C. C., Srolovitz, D. J. & Butler, J. E., 15 Dec 1997, In: Journal of Applied Physics. 82, 12, p. 6293-6300Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Scopus citations: 27Tip artifacts in atomic force microscope imaging of ion bombarded nanostructures on germanium surfaces
Chen, Y. J., Wilson, I. H., Lee, C. S., Xu, J. B. & Yu, M. L., 1 Dec 1997, In: Journal of Applied Physics. 82, 11, p. 5859-5861Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Scopus citations: 7Multilayer film stability
Sridhar, N., Rickman, J. M. & Srolovitz, D. J., 15 Nov 1997, In: Journal of Applied Physics. 82, 10, p. 4852-4859Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Scopus citations: 18Polarity effect on failure of Ni and Ni2Si contacts on Si
Huang, J. S., Tu, K. N., Bedell, S. W., Lanford, W. A., Cheng, S. L., Lai, J. B. & Chen, L. J., 1 Sept 1997, In: Journal of Applied Physics. 82, 5, p. 2370-2377Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
The selective etching with H+ ions and its effect on the oriented growth of diamond films
Zhang, W. J., Jiang, X. & Xia, Y. B., 15 Aug 1997, In: Journal of Applied Physics. 82, 4, p. 1896-1899Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Scopus citations: 38Assessment of the theoretical basis of the Rule of Additivity for the nucleation incubation time during continuous cooling
Zhu, Y. T., Lowe, T. C. & Asaro, R. J., 1 Aug 1997, In: Journal of Applied Physics. 82, 3, p. 1129-1137Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Scopus citations: 15Kinetics of Cu3Ge formation and reaction with Al
Huang, J. S., Huang, S. S., Tu, K. N., Deng, F., Lau, S. S., Cheng, S. L. & Chen, L. J., 15 Jul 1997, In: Journal of Applied Physics. 82, 2, p. 644-649Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Scopus citations: 4Transmission electron microscopy on {113} rodlike defects and {111} dislocation loops in silicon-implanted silicon
Pan, G. Z. & Tu, K. N., 15 Jul 1997, In: Journal of Applied Physics. 82, 2, p. 601-606Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Scopus citations: 5High temperature behavior of Pt and Pd on GaN
Duxstad, K. J., Haller, E. E. & Yu, K. M., 1 Apr 1997, In: Journal of Applied Physics. 81, 7, p. 3134-3137Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Scopus citations: 47- Published
Kinetics of transformation with nucleation and growth mechanism: Special consideration of crystallographic relationship and epitaxial growth
Yu, G., Lee, S. T., Lai, J. K. L. & Ngai, L., 1 Jan 1997, In: Journal of Applied Physics. 81, 1, p. 89-95Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Scopus citations: 12 Size-distribution and annealing behavior of end-of-range dislocation loops in silicon-implanted silicon
Pan, G. Z., Tu, K. N. & Prussin, A., 1 Jan 1997, In: Journal of Applied Physics. 81, 1, p. 78-84Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Scopus citations: 17- 1996
A two-dimensional molecular dynamics simulation of thin film growth by oblique deposition
Dong, L., Smith, R. W. & Srolovitz, D. J., 15 Nov 1996, In: Journal of Applied Physics. 80, 10, p. 5682-5690Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Scopus citations: 28Amphoteric behavior and precipitation of Ge dopants in InP
Yu, K. M., Moll, A. J. & Walukiewicz, W., 1 Nov 1996, In: Journal of Applied Physics. 80, 9, p. 4907-4915Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Scopus citations: 5Morphology of wetting reaction of eutectic SnPb solder on Au foils
Kim, P. G. & Tu, K. N., 1 Oct 1996, In: Journal of Applied Physics. 80, 7, p. 3822-3827Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Scopus citations: 8- Published
Ion-exchanged Fe doped KTiOPO4 optical waveguides
Pun, E. Y. B., Shi, L. P. & Chung, P. S., 1 Sept 1996, In: Journal of Applied Physics. 80, 5, p. 3118-3120Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Scopus citations: 5 Spalling of Cu6Sn5 spheroids in the soldering reaction of eutectic SnPb on Cr/Cu/Au thin films
Liu, A. A., Kim, H. K., Tu, K. N. & Totta, P. A., 1 Sept 1996, In: Journal of Applied Physics. 80, 5, p. 2774-2780Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Scopus citations: 24- Published
Magnetic entropy in nanocomposite binary gadolinium alloys
Shao, Y., Zhang, J., Lai, J. K. L. & Shek, C. H., 1 Jul 1996, In: Journal of Applied Physics. 80, 1, p. 76-80Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Scopus citations: 46 - Published
Defect states responsible for leakage current in Ta2O5 films on Si due to Si contamination from the substrate
Lau, W. S., Khaw, K. K., Qian, P. W., Sandler, N. P. & Chu, P. K., 1 Jun 1996, In: Journal of Applied Physics. 79, 11, p. 8841-8843Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Scopus citations: 23 Electrical activation and local structure of Se atoms in ion-implanted indium phosphide
Yu, K. M., Chan, N. & Hsu, L., 1 Jun 1996, In: Journal of Applied Physics. 79, 11, p. 8445-8450Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 62_Review of books or of software (or similar publications/items) › peer-review
Scopus citations: 2