Journal of Applied Physics

Journal of Applied Physics

ISSNs: 0021-8979

Additional searchable ISSN (Electronic): 1089-7550

AMER INST PHYSICS, United States

Scopus (2020), Scopus rating (2020): CiteScore 4.3

Journal

Journal Metrics
421 - 440 out of 440Page size: 20

Research Output

  1. 1990

  2. Antiferromagnetic form factor of Sr2CuO2Cl 2

    Wang, X. L., Miller, L. L., Ye, J., Stassis, C., Harmon, B. N., Johnston, D. C., Schultz, A. J. & 1 others, Loong, C. K., 1990, In : Journal of Applied Physics. 67, 9, p. 4524-4526

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

    Scopus citations: 10
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  3. Gate dielectric-dependent flicker noise in metal-oxide-semiconductor transistors

    Wong, H. & Cheng, Y. C., 1990, In : Journal of Applied Physics. 67, 2, p. 863-867

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

    Scopus citations: 14
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  4. Instabilities of metal-oxide-semiconductor transistor with high-temperature annealing of its gate oxide in ammonia

    Wong, H. & Cheng, Y. C., 1990, In : Journal of Applied Physics. 67, 11, p. 7132-7138

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

    Scopus citations: 24
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  5. Surface-related low-frequency noise of sputtered copper film

    Wong, H., Cheng, Y. C. & Ruan, G., 1990, In : Journal of Applied Physics. 67, 1, p. 312-316

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

    Scopus citations: 9
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  6. 1989

  7. The dynamics of free, straight dislocation pairs. II. Edge dislocations

    Eykholt, R. & Srolovitz, D. J., 1 Jun 1989, In : Journal of Applied Physics. 65, 11, p. 4204-4211

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

    Scopus citations: 5
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  8. The dynamics of free, straight dislocation pairs. I. Screw dislocations

    Eykholt, R., Trugman, S. A. & Srolovitz, D. J., 1 Jun 1989, In : Journal of Applied Physics. 65, 11, p. 4198-4203

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

    Scopus citations: 4
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  9. The characterization of high-frequency ultrasonic fields using a polarimetric optical fiber sensor

    Chan, H. L. W., Chiang, K. S., Price, D. C. & Gardner, J. L., 1989, In : Journal of Applied Physics. 66, 4, p. 1565-1570

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

    Scopus citations: 22
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  10. 1988

  11. A new growth model of thin silicon oxide in dry oxygen

    Wong, H. & Cheng, Y. C., 1988, In : Journal of Applied Physics. 64, 2, p. 893-897

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

    Scopus citations: 9
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  12. High-temperature annealing characteristics of tungsten and tungsten nitride Schottky contacts to GaAs under different annealing conditions

    Yu, K. M., Jaklevic, J. M., Haller, E. E., Cheung, S. K. & Kwok, P. S., 1988, In : Journal of Applied Physics. 64, 3, p. 1284-1291

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

    Scopus citations: 27
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  13. 1987

  14. A comparative study of phase stability and film morphology in thin-film M/GaAs systems (M=Co, Rh, Ir, Ni, Pd, and Pt)

    Sands, T., Keramidas, V. G., Yu, K. M., Washburn, J. & Krishnan, K., 1987, In : Journal of Applied Physics. 62, 5, p. 2070-2079

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

    Scopus citations: 79
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  15. Correlation between solid-state reaction and electrical properties of the Rh/GaAs Schottky contact

    Yu, K. M., Cheung, S. K., Sands, T., Jaklevic, J. M. & Haller, E. E., 1987, In : Journal of Applied Physics. 61, 3, p. 1099-1102

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

    Scopus citations: 11
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  16. Interfacial interactions of evaporated iridium thin films with (100) GaAs

    Yu, K. M., Sands, T., Jaklevic, J. M. & Haller, E. E., 1987, In : Journal of Applied Physics. 62, 5, p. 1815-1820

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

    Scopus citations: 9
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  17. Silicided shallow junction formation by ion implantation of impurity ions into silicide layers and subsequent drive-in

    Kwong, D. L., Ku, Y. H., Lee, S. K., Louis, E., Alvi, N. S. & Chu, P., 1987, In : Journal of Applied Physics. 61, 11, p. 5084-5088

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

    Scopus citations: 52
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  18. 1986

  19. Surface segregation during deposition

    Eykholt, R. & Srolovitz, D. J., 1 Sep 1986, In : Journal of Applied Physics. 60, 5, p. 1793-1796

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

    Scopus citations: 5
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  20. Capillary instabilities in thin films. I. Energetics

    Srolovitz, D. J. & Safran, S. A., 1 Jul 1986, In : Journal of Applied Physics. 60, 1, p. 247-254

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

    Scopus citations: 258
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  21. Capillary instabilities in thin films. II. Kinetics

    Srolovitz, D. J. & Safran, S. A., 1 Jul 1986, In : Journal of Applied Physics. 60, 1, p. 255-260

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

    Scopus citations: 199
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  22. Atom and acceptor depth distributions for aluminum channeled in silicon as a function of ion energy and crystal orientation

    Wilson, R. G., Jamba, D. M., Chu, P. K., Hopkins, C. G. & Hitzman, C. J., 1986, In : Journal of Applied Physics. 60, 8, p. 2806-2809

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

    Scopus citations: 4
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  23. Schottky barrier degradation of the W/GaAs system after high-temperature annealing

    Yu, K. M., Cheung, S. K., Sands, T., Jaklevic, J. M., Cheung, N. W. & Haller, E. E., 1986, In : Journal of Applied Physics. 60, 9, p. 3235-3242

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

    Scopus citations: 32
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  24. 1985

  25. Rapid thermal annealing of dopants implanted into preamorphized silicon

    Seidel, T. E., Knoell, R., Poli, G., Schwartz, B., Stevie, F. A. & Chu, P., 1985, In : Journal of Applied Physics. 58, 2, p. 683-687

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

    Scopus citations: 28
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  26. 1983

  27. Damage induced in Si by ion milling or reactive ion etching

    Pang, S. W., Rathman, D. D., Silversmith, D. J., Mountain, R. W. & DeGraff, P. D., 1983, In : Journal of Applied Physics. 54, 6, p. 3272-3277

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

    Scopus citations: 100
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