Journal of Applied Physics
Journal of Applied Physics
ISSNs: 0021-8979
Additional searchable ISSN (Electronic): 1089-7550
AMER INST PHYSICS, United States
Scopus (2020), Scopus rating (2020): CiteScore 4.3
Journal
Research Output
- 1990
Antiferromagnetic form factor of Sr2CuO2Cl 2
Wang, X. L., Miller, L. L., Ye, J., Stassis, C., Harmon, B. N., Johnston, D. C., Schultz, A. J. & 1 others, , 1990, In : Journal of Applied Physics. 67, 9, p. 4524-4526Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Scopus citations: 10Gate dielectric-dependent flicker noise in metal-oxide-semiconductor transistors
Wong, H. & Cheng, Y. C., 1990, In : Journal of Applied Physics. 67, 2, p. 863-867Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Scopus citations: 14Instabilities of metal-oxide-semiconductor transistor with high-temperature annealing of its gate oxide in ammonia
Wong, H. & Cheng, Y. C., 1990, In : Journal of Applied Physics. 67, 11, p. 7132-7138Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Scopus citations: 24Surface-related low-frequency noise of sputtered copper film
Wong, H., Cheng, Y. C. & Ruan, G., 1990, In : Journal of Applied Physics. 67, 1, p. 312-316Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Scopus citations: 9- 1989
The dynamics of free, straight dislocation pairs. II. Edge dislocations
Eykholt, R. & Srolovitz, D. J., 1 Jun 1989, In : Journal of Applied Physics. 65, 11, p. 4204-4211Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Scopus citations: 5The dynamics of free, straight dislocation pairs. I. Screw dislocations
Eykholt, R., Trugman, S. A. & Srolovitz, D. J., 1 Jun 1989, In : Journal of Applied Physics. 65, 11, p. 4198-4203Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Scopus citations: 4The characterization of high-frequency ultrasonic fields using a polarimetric optical fiber sensor
Chan, H. L. W., Chiang, K. S., Price, D. C. & Gardner, J. L., 1989, In : Journal of Applied Physics. 66, 4, p. 1565-1570Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Scopus citations: 22- 1988
A new growth model of thin silicon oxide in dry oxygen
Wong, H. & Cheng, Y. C., 1988, In : Journal of Applied Physics. 64, 2, p. 893-897Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Scopus citations: 9High-temperature annealing characteristics of tungsten and tungsten nitride Schottky contacts to GaAs under different annealing conditions
Yu, K. M., Jaklevic, J. M., Haller, E. E., Cheung, S. K. & Kwok, P. S., 1988, In : Journal of Applied Physics. 64, 3, p. 1284-1291Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Scopus citations: 27- 1987
A comparative study of phase stability and film morphology in thin-film M/GaAs systems (M=Co, Rh, Ir, Ni, Pd, and Pt)
Sands, T., Keramidas, V. G., Yu, K. M., Washburn, J. & Krishnan, K., 1987, In : Journal of Applied Physics. 62, 5, p. 2070-2079Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Scopus citations: 79Correlation between solid-state reaction and electrical properties of the Rh/GaAs Schottky contact
Yu, K. M., Cheung, S. K., Sands, T., Jaklevic, J. M. & Haller, E. E., 1987, In : Journal of Applied Physics. 61, 3, p. 1099-1102Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Scopus citations: 11Interfacial interactions of evaporated iridium thin films with (100) GaAs
Yu, K. M., Sands, T., Jaklevic, J. M. & Haller, E. E., 1987, In : Journal of Applied Physics. 62, 5, p. 1815-1820Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Scopus citations: 9Silicided shallow junction formation by ion implantation of impurity ions into silicide layers and subsequent drive-in
Kwong, D. L., Ku, Y. H., Lee, S. K., Louis, E., Alvi, N. S. & Chu, P., 1987, In : Journal of Applied Physics. 61, 11, p. 5084-5088Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Scopus citations: 52- 1986
Surface segregation during deposition
Eykholt, R. & Srolovitz, D. J., 1 Sep 1986, In : Journal of Applied Physics. 60, 5, p. 1793-1796Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Scopus citations: 5Capillary instabilities in thin films. I. Energetics
Srolovitz, D. J. & Safran, S. A., 1 Jul 1986, In : Journal of Applied Physics. 60, 1, p. 247-254Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Scopus citations: 258Capillary instabilities in thin films. II. Kinetics
Srolovitz, D. J. & Safran, S. A., 1 Jul 1986, In : Journal of Applied Physics. 60, 1, p. 255-260Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Scopus citations: 199Atom and acceptor depth distributions for aluminum channeled in silicon as a function of ion energy and crystal orientation
Wilson, R. G., Jamba, D. M., Chu, P. K., Hopkins, C. G. & Hitzman, C. J., 1986, In : Journal of Applied Physics. 60, 8, p. 2806-2809Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Scopus citations: 4Schottky barrier degradation of the W/GaAs system after high-temperature annealing
Yu, K. M., Cheung, S. K., Sands, T., Jaklevic, J. M., Cheung, N. W. & Haller, E. E., 1986, In : Journal of Applied Physics. 60, 9, p. 3235-3242Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Scopus citations: 32- 1985
Rapid thermal annealing of dopants implanted into preamorphized silicon
Seidel, T. E., Knoell, R., Poli, G., Schwartz, B., Stevie, F. A. & Chu, P., 1985, In : Journal of Applied Physics. 58, 2, p. 683-687Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Scopus citations: 28- 1983
Damage induced in Si by ion milling or reactive ion etching
Pang, S. W., Rathman, D. D., Silversmith, D. J., Mountain, R. W. & DeGraff, P. D., 1983, In : Journal of Applied Physics. 54, 6, p. 3272-3277Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Scopus citations: 100