IEEE Transactions on Electron Devices

IEEE Transactions on Electron Devices

ISSNs: 0018-9383, 0096-2430, 0197-6370

Additional searchable ISSN (electronic): 1557-9646

Institute of Electrical and Electronics Engineers, United States

Scopus rating (2023): CiteScore 5.8 SJR 0.785 SNIP 1.223

Journal

Journal Metrics
1 - 10 out of 10Page size: 20

Research Output

  1. 2024

  2. A Transconductance-Based Extraction Method for Thermal Resistance in GaN HEMTs

    Luo, H. & Guo, Y., Feb 2024, In: IEEE Transactions on Electron Devices. 71, 2, p. 997-1002

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

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  3. 2019

  4. Fully Inkjet-Printed Photodetector Using a Graphene/Perovskite/Graphene Heterostructure

    Alamri, A. M., Leung, S.-F., Vaseem, M., Shamim, A. & He, J.-H., Jun 2019, In: IEEE Transactions on Electron Devices. 66, 6, p. 2657-2661 8715735.

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 120
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  5. Self-Organized Al Nanotip Electrodes for Achieving Ultralow-Power and Error-Free Memory

    Duran Retamal, J. R., Ho, C.-H., Tsai, K.-T., Ke, J.-J. & He, J.-H., Feb 2019, In: IEEE Transactions on Electron Devices. 66, 2, p. 938-943 8599128.

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 24
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  6. Analytical Gate Capacitance Models for Large-Signal Compact Model of AlGaN/GaN HEMTs

    Jia, Y., Xu, Y., Wen, Z., Wu, Y. & Guo, Y., 1 Jan 2019, In: IEEE Transactions on Electron Devices. 66, 1, p. 357-363 8556100.

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 22
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  7. 2018

  8. Characterization of buffer-related current collapse by buffer potential simulation in AlGaN/GaN HEMTs

    Jia, Y., Xu, Y., Lu, K., Wen, Z., Huang, A.-D. & Guo, Y.-X., 1 Aug 2018, In: IEEE Transactions on Electron Devices. 65, 8, p. 3169-3175 8401849.

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 38
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  9. 2011

  10. Single-ZnO-Nanowire Memory

    Chiang, Y.-D., Chang, W.-Y., Ho, C.-Y., Chen, C.-Y., Ho, C.-H., Lin, S.-J. & Wu, T.-B. & 1 others, He, J.-H., Jun 2011, In: IEEE Transactions on Electron Devices. 58, 6, p. 1735-1740 5741715.

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 81
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  11. 2005

  12. Three-dimensional substrate impedance engineering based on p-/p+ Si substrate for mixed-signal system-on-chip (SoC)

    Chong, K., Zhang, X., Tu, K.-N., Huang, D., Chang, M.-C. & Xie, Y.-H., Nov 2005, In: IEEE Transactions on Electron Devices. 52, 11, p. 2440-2446

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 8
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  13. 1999

  14. High current density Si field emission devices with plasma passivation and HfC coating

    Rakhshandehroo, M. R. & Pang, S. W., 1999, In: IEEE Transactions on Electron Devices. 46, 4, p. 792-797

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 17
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  15. 1990

  16. Study of the Electronic Trap Distribution at the SiO2-Si Interface Utilizing the Low-Frequency Noise Measurement

    Wong, H. & Cheng, Y. C., Jul 1990, In: IEEE Transactions on Electron Devices. 37, 7, p. 1743-1749

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 39
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  17. 1981

  18. I-2 Shallow Silicide Contact for Shallow Junction Devices

    Tu, K. N., Oct 1981, In: IEEE Transactions on Electron Devices. 28, 10

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

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