IEEE Transactions on Electron Devices

IEEE Transactions on Electron Devices

ISSNs: 0018-9383, 0096-2430, 0197-6370

Additional searchable ISSN (Electronic): 1557-9646

Institute of Electrical and Electronics Engineers, United States

Scopus rating (2021): CiteScore 4.9

Journal

Journal Metrics

Research Output

  1. 2019
  2. Fully Inkjet-Printed Photodetector Using a Graphene/Perovskite/Graphene Heterostructure

    Alamri, A. M., Leung, S., Vaseem, M., Shamim, A. & He, J., Jun 2019, In: IEEE Transactions on Electron Devices. 66, 6, p. 2657-2661 8715735.

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

    Scopus citations: 74
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  3. Self-Organized Al Nanotip Electrodes for Achieving Ultralow-Power and Error-Free Memory

    Duran Retamal, J. R., Ho, C., Tsai, K., Ke, J. & He, J., Feb 2019, In: IEEE Transactions on Electron Devices. 66, 2, p. 938-943 8599128.

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

    Scopus citations: 21
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  4. 2011
  5. Single-ZnO-Nanowire Memory

    Chiang, Y., Chang, W., Ho, C., Chen, C., Ho, C., Lin, S., Wu, T. & 1 others, He, J., Jun 2011, In: IEEE Transactions on Electron Devices. 58, 6, p. 1735-1740 5741715.

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

    Scopus citations: 67
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  6. 2005
  7. Three-dimensional substrate impedance engineering based on p-/p+ Si substrate for mixed-signal system-on-chip (SoC)

    Chong, K., Zhang, X., Tu, K., Huang, D., Chang, M. & Xie, Y., Nov 2005, In: IEEE Transactions on Electron Devices. 52, 11, p. 2440-2446

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

    Scopus citations: 8
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  8. 1999
  9. High current density Si field emission devices with plasma passivation and HfC coating

    Rakhshandehroo, M. R. & Pang, S. W., 1999, In: IEEE Transactions on Electron Devices. 46, 4, p. 792-797

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

    Scopus citations: 16
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  10. 1990
  11. Study of the Electronic Trap Distribution at the SiO2-Si Interface Utilizing the Low-Frequency Noise Measurement

    Wong, H. & Cheng, Y. C., Jul 1990, In: IEEE Transactions on Electron Devices. 37, 7, p. 1743-1749

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

    Scopus citations: 38
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  12. 1981
  13. I-2 Shallow Silicide Contact for Shallow Junction Devices

    Tu, K. N., Oct 1981, In: IEEE Transactions on Electron Devices. 28, 10

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

    Check@CityULib