IEEE Transactions on Electron Devices

IEEE Transactions on Electron Devices

ISSNs: 0018-9383, 0096-2430, 0197-6370

Additional searchable ISSN (electronic): 1557-9646

Institute of Electrical and Electronics Engineers, United States

Scopus rating (2023): CiteScore 5.8 SJR 0.785 SNIP 1.223

Journal

Journal Metrics
21 - 33 out of 33Page size: 20

Research Output

  1. 2012
  2. Published

    Piezoresistive sensing in a soi mechanically coupled micromechanical multiple-resonator array

    Iqbal, A. & Lee, J.E.-Y., 2012, In: IEEE Transactions on Electron Devices. 59, 11, p. 3091-3096 6319380.

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 12
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  3. 2011

  4. Single-ZnO-Nanowire Memory

    Chiang, Y.-D., Chang, W.-Y., Ho, C.-Y., Chen, C.-Y., Ho, C.-H., Lin, S.-J. & Wu, T.-B. & 1 others, He, J.-H., Jun 2011, In: IEEE Transactions on Electron Devices. 58, 6, p. 1735-1740 5741715.

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 81
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  5. 2005

  6. Three-dimensional substrate impedance engineering based on p-/p+ Si substrate for mixed-signal system-on-chip (SoC)

    Chong, K., Zhang, X., Tu, K.-N., Huang, D., Chang, M.-C. & Xie, Y.-H., Nov 2005, In: IEEE Transactions on Electron Devices. 52, 11, p. 2440-2446

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 8
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  7. 2004
  8. Published

    Numerical study of self-heating effects of MOSFETs fabricated on SOAN substrate

    Zhu, M., Chen, P., Fu, R.K.-Y., An, Z., Lin, C. & Chu, P. K., Jun 2004, In: IEEE Transactions on Electron Devices. 51, 6, p. 901-906

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 43
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  9. 2003
  10. Published

    Interface structure of ultrathin oxide prepared by N2O oxidation

    Wong, H., Poon, V. M. C., Kok, C. W., Chan, P. J. & Gritsenko, V. A., Sept 2003, In: IEEE Transactions on Electron Devices. 50, 9, p. 1941-1945

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 30
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  11. 1999

  12. High current density Si field emission devices with plasma passivation and HfC coating

    Rakhshandehroo, M. R. & Pang, S. W., 1999, In: IEEE Transactions on Electron Devices. 46, 4, p. 792-797

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 17
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  13. 1997
  14. Published

    Approximation of the length of velocity saturation region in MOSFET's

    Wong, H. & Poon, M. C., 1997, In: IEEE Transactions on Electron Devices. 44, 11, p. 2033-2036

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 38
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  15. 1996
  16. Published

    Modeling of the parasitic transistor-induced drain breakdown in MOSFET's

    Wong, H., 1996, In: IEEE Transactions on Electron Devices. 43, 12, p. 2190-2196

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 20
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  17. 1995
  18. Published

    Physically-based MOS transistor avalanche breakdown model

    Wong, H., Dec 1995, In: IEEE Transactions on Electron Devices. 42, 12, p. 2197-2202

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 44
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  19. 1994
  20. Published

    A New Approach to Current-Voltage Characteristics Formation for Short-Channel MOSFET’s

    Wong, H., Dec 1994, In: IEEE Transactions on Electron Devices. 41, 12, p. 2480-2482

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 8
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  21. 1991
  22. Published

    Modeling of Low-Frequency Noise in Metal-Oxide-Semiconductor Field-Effect Transistor with Electron Trapping-Detrapping at Oxide-Silicon Interface

    Wong, H., Aug 1991, In: IEEE Transactions on Electron Devices. 38, 8, p. 1883-1888

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 8
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  23. 1990

  24. Study of the Electronic Trap Distribution at the SiO2-Si Interface Utilizing the Low-Frequency Noise Measurement

    Wong, H. & Cheng, Y. C., Jul 1990, In: IEEE Transactions on Electron Devices. 37, 7, p. 1743-1749

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 39
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  25. 1981

  26. I-2 Shallow Silicide Contact for Shallow Junction Devices

    Tu, K. N., Oct 1981, In: IEEE Transactions on Electron Devices. 28, 10

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

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