IEEE Transactions on Electron Devices

IEEE Transactions on Electron Devices

ISSNs: 0018-9383, 0096-2430, 0197-6370

Additional searchable ISSN (Electronic): 1557-9646

Institute of Electrical and Electronics Engineers, United States

Scopus rating (2021): CiteScore 4.9

Journal

Journal Metrics

Research Output

  1. 1996
  2. Published

    Modeling of the parasitic transistor-induced drain breakdown in MOSFET's

    Wong, H., 1996, In: IEEE Transactions on Electron Devices. 43, 12, p. 2190-2196

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

    Scopus citations: 20
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  3. 1995
  4. Published

    Physically-based MOS transistor avalanche breakdown model

    Wong, H., Dec 1995, In: IEEE Transactions on Electron Devices. 42, 12, p. 2197-2202

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

    Scopus citations: 43
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  5. 1994
  6. Published

    A New Approach to Current-Voltage Characteristics Formation for Short-Channel MOSFET’s

    Wong, H., Dec 1994, In: IEEE Transactions on Electron Devices. 41, 12, p. 2480-2482

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

    Scopus citations: 6
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  7. 1991
  8. Published

    Modeling of Low-Frequency Noise in Metal-Oxide-Semiconductor Field-Effect Transistor with Electron Trapping-Detrapping at Oxide-Silicon Interface

    Wong, H., Aug 1991, In: IEEE Transactions on Electron Devices. 38, 8, p. 1883-1888

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

    Scopus citations: 7
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  9. 1990
  10. Study of the Electronic Trap Distribution at the SiO2-Si Interface Utilizing the Low-Frequency Noise Measurement

    Wong, H. & Cheng, Y. C., Jul 1990, In: IEEE Transactions on Electron Devices. 37, 7, p. 1743-1749

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

    Scopus citations: 38
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  11. 1981
  12. I-2 Shallow Silicide Contact for Shallow Junction Devices

    Tu, K. N., Oct 1981, In: IEEE Transactions on Electron Devices. 28, 10

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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