IEEE Electron Device Letters

IEEE Electron Device Letters

ISSNs: 0741-3106, 0193-8576

Additional searchable ISSN (Electronic): 1558-0563

Institute of Electrical and Electronics Engineers, United States

Scopus rating (2021): CiteScore 8.5 SJR 1.13 SNIP 1.649

Journal

Journal Metrics
1 - 10 out of 10Page size: 20

Research Output

  1. 2017

  2. Device Process and Circuit Application Interaction for Harsh Electronics: Hf-In-Zn-O Thin Film Transistors as an Example

    Ho, C., Tsai, D., Lu, C., Kim, S. Y., Mungan, S., Yang, S., Zhang, Y., & 1 othersHe, J., Aug 2017, In: IEEE Electron Device Letters. 38, 8, p. 1039-1042 7959154.

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

    Scopus citations: 9
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  3. 2015

  4. Galvanic Effect of Au-Ag Electrodes for Conductive Bridging Resistive Switching Memory

    Kuo, C. C., Chen, I. C., Shih, C. C., Chang, K. C., Huang, C. H., Chen, P. H., Chang, T., & 3 othersTsai, T. M., Chang, J. S. & Huang, J. C., Dec 2015, In: IEEE Electron Device Letters. 36, 12, p. 1321-1324 7312919.

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

    Scopus citations: 32
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  5. Surface-Controlled Metal Oxide Resistive Memory

    Ke, J., Namura, K., Retamal, J. R., Ho, C., Minamitake, H., Wei, T., Tsai, D., & 3 othersLin, C., Suzuki, M. & He, J., Dec 2015, In: IEEE Electron Device Letters. 36, 12, p. 1307-1309 7310859.

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

    Scopus citations: 9
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  6. 2012

  7. 4H-SiC Metal-Semiconductor-Metal Ultraviolet Photodetectors in Operation of 450 °c

    Lien, W., Tsai, D., Lien, D., Senesky, D. G., He, J. & Pisano, A. P., Nov 2012, In: IEEE Electron Device Letters. 33, 11, p. 1586-1588 6329395.

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

    Scopus citations: 63
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  8. Photocarrier Relaxation Behavior of a Single ZnO Nanowire UV Photodetector: Effect of Surface Band Bending

    Chen, M., Retamal, J. R. D., Chen, C. & He, J., Mar 2012, In: IEEE Electron Device Letters. 33, 3, p. 411-413 6144690.

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

    Scopus citations: 53
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  9. 2011

  10. Low-Temperature, Ion Beam-Assisted SiC Thin Films With Antireflective ZnO Nanorod Arrays for High-Temperature Photodetection

    Lien, W., Tsai, D., Chiu, S., Senesky, D. G., Maboudian, R., Pisano, A. P. & He, J., Nov 2011, In: IEEE Electron Device Letters. 32, 11, p. 1564-1566 6022746.

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

    Scopus citations: 31
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  11. Efficiency enhancement of InGaN-based multiple quantum well solar cells employing antireflective ZnO nanorod arrays

    Lin, G. J., Lai, K. Y., Lin, C. A., Lai, Y. & He, J. H., Aug 2011, In: IEEE Electron Device Letters. 32, 8, p. 1104-1106 5930323.

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

    Scopus citations: 27
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  12. Origin of Hot Carriers in InGaN-Based Quantum-Well Solar Cells

    Lai, K. Y., Lin, G. J., Chen, C., Lai, Y. & He, J. H., Feb 2011, In: IEEE Electron Device Letters. 32, 2, p. 179-181 5671457.

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

    Scopus citations: 24
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  13. 2008

  14. A single-crystal-silicon bulk-acoustic-mode microresonator oscillator

    Lee, J. E., Bahreyni, B., Zhu, Y. & Seshia, A. A., Jul 2008, In: IEEE Electron Device Letters. 29, 7, p. 701-703

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

    Scopus citations: 58
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  15. 1990

  16. Amorphous Carbon Films as Planarization Layers Deposited by Plasma-Enhanced Chemical Vapor Deposition

    Pang, S. W. & Horn, M. W., Sep 1990, In: IEEE Electron Device Letters. 11, 9, p. 391-393

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

    Scopus citations: 6
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