IEEE Electron Device Letters

IEEE Electron Device Letters

ISSNs: 0741-3106, 0193-8576

Additional searchable ISSN (electronic): 1558-0563

Institute of Electrical and Electronics Engineers, United States

Scopus rating (2023): CiteScore 8.2 SJR 1.25 SNIP 1.5

Journal

Journal Metrics
1 - 18 out of 18Page size: 20

Research Output

  1. 2022
  2. Published

    Acoustic Centrifugation Facilitating Particle Sensing in Liquid on a Piezoelectric Resonator

    Qian, J., Begum, H. & Lee, J.E.-Y., May 2022, In: IEEE Electron Device Letters. 43, 5, p. 801-804 4 p.

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 5
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  3. 2020
  4. Published

    Polymer Electret Improves the Performance of the Oxygen-Doped Organic Field-Effect Transistors

    Li, D., Zhu, Y., Wei, P., Lu, W., Li, S., Wang, S. & Xu, B. B. & 1 others, Lu, G., Nov 2020, In: IEEE Electron Device Letters. 41, 11, p. 1665-1668 9205215.

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 8
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  5. Published

    Stable Hysteresis-Free MoS2 Transistors With Low-k/High-k Bilayer Gate Dielectrics

    Zhang, Z., Su, M., Li, G., Wang, J., Zhang, X., Ho, J. C. & Wang, C. & 3 others, Wan, D., Liu, X. & Liao, L., Jul 2020, In: IEEE Electron Device Letters. 41, 7, p. 1036-1039

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 12
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  6. Published

    Equivalent Circuit of Quantum-Dot LED and Acquisition of Carrier Lifetime in Active Layer

    Xiao, H., Wang, K., Wang, R., Chen, W. & Chiang, K. S., Jan 2020, In: IEEE Electron Device Letters. 41, 1, p. 87-90 8907889.

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 10
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  7. 2018
  8. Published

    A Compact and Low-Loss Bandpass Filter Using Self-Coupled Folded-Line Resonator With Capacitive Feeding Technique

    Hou, Z. J., Yang, Y., Zhu, X., Li, Y. C., Dutkiewicz, E. & Xue, Q., Oct 2018, In: IEEE Electron Device Letters. 39, 10, p. 1584-1587

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 43
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  9. Published

    Wideband Millimeter-Wave On-Chip Quadrature Coupler with Improved In-Band Flatness in 0.13-μm SiGe Technology

    Hou, Z. J., Yang, Y., Chiu, L., Zhu, X. & Xue, Q., May 2018, In: IEEE Electron Device Letters. 39, 5, p. 652-655

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 16
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  10. 2017
  11. Published

    Compact On-Chip Bandpass Filter with Improved In-Band Flatness and Stopband Attenuation in 0.13-μm (Bi)-CMOS Technology

    Yang, Y., Liu, H., Hou, Z. J., Zhu, X., Dutkiewicz, E. & Xue, Q., Oct 2017, In: IEEE Electron Device Letters. 38, 10, p. 1359-1362 8010269.

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 64
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  12. Published

    Flexible Low-Power Organic Complementary Inverter Based on Low-k Polymer Dielectric

    Liu, J., Gao, X., Xu, J.-L., Ruotolo, A. & Wang, S.-D., Oct 2017, In: IEEE Electron Device Letters. 38, 10, p. 1461-1464 8004420.

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 5
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  13. Published

    An On-Chip Bandpass Filter Using a Broadside-Coupled Meander Line Resonator with a Defected-Ground Structure

    Zhong, Y., Yang, Y., Zhu, X., Dutkiewicz, E., Shum, K. M. & Xue, Q., 1 May 2017, In: IEEE Electron Device Letters. 38, 5, p. 626-629 7891020.

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 91
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  14. 2016
  15. Published

    Tungsten-Doped Nb2O5 Nanorod Sensor for Toxic and Combustible Gas Monitoring Applications

    Yu, J., Cheung, K. W., Yan, W. H. & Ho, D., Sept 2016, In: IEEE Electron Device Letters. 37, 9, p. 1223-1226

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 5
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  16. Published

    A broadside-coupled meander-line resonator in 0.13-μm SiGe technology for millimeter-wave application

    Chakraborty, S., Yang, Y., Zhu, X., Sevimli, O., Xue, Q., Esselle, K. & Heimlich, M., 1 Mar 2016, In: IEEE Electron Device Letters. 37, 3, p. 329-332 7390000.

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 91
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  17. 2013
  18. Published

    A horseshoe micromachined resonant magnetic field sensor with high quality factor

    Zhang, W. & Lee, J.E.-Y., Oct 2013, In: IEEE Electron Device Letters. 34, 10, p. 1310-1312 6595578.

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 22
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  19. Published

    Stability and low-frequency noise in InAs NW parallel-array thin-film transistors

    Wahl, R. E., Wang, F., Chung, H. E., Kunnen, G. R., Yip, S., Lee, E. H. & Pun, E. Y. B. & 3 others, Raupp, G. B., Allee, D. R. & Ho, J. C., 2013, In: IEEE Electron Device Letters. 34, 6, p. 765-767 6515612.

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 9
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  20. 2012
  21. Published

    Thermoelastic dissipation in etch-hole filled Lamé bulk-mode silicon microresonators

    Tu, C. & Lee, J.E.-Y., Mar 2012, In: IEEE Electron Device Letters. 33, 3, p. 450-452 6144691.

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 17
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  22. Published

    Reversed nonlinear oscillations in lamé-mode single-crystal-silicon microresonators

    Zhu, H. & Lee, J.E.-Y., 2012, In: IEEE Electron Device Letters. 33, 10, p. 1492-1494 6291747.

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 9
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  23. 2011
  24. Published

    Subthreshold characteristics of MOS transistors with CeO2La 2O3 stacked gate dielectric

    Wong, H., Yang, B. L., Kakushima, K. & Iwai, H., Aug 2011, In: IEEE Electron Device Letters. 32, 8, p. 1002-1004 5898389.

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 13
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  25. 2010
  26. Published

    Fermi-level pinning at metal/high-k interface influenced by electron state density of metal gate

    Yang, Z. C., Huang, A. P., Zheng, X. H., Xiao, Z. S., Liu, X. Y., Zhang, X. W. & Chu, P. K. & 1 others, Wang, W. W., Oct 2010, In: IEEE Electron Device Letters. 31, 10, p. 1101-1103 5560726.

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 13
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  27. 1998
  28. Published

    Fabrication of low dielectric constant materials for ULSI multilevel interconnection by plasma ion implantation

    Qin, S., Zhou, Y., Chan, C. & Chu, P. K., Nov 1998, In: IEEE Electron Device Letters. 19, 11, p. 420-422

    Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

    Scopus citations: 10
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