IEEE Electron Device Letters

IEEE Electron Device Letters

ISSNs: 0741-3106, 0193-8576

Additional searchable ISSN (Electronic): 1558-0563

Institute of Electrical and Electronics Engineers, United States

Scopus rating (2021): CiteScore 8.5 SJR 1.13 SNIP 1.649

Journal

Journal Metrics
21 - 28 out of 28Page size: 20

Research Output

  1. 2011

  2. Low-Temperature, Ion Beam-Assisted SiC Thin Films With Antireflective ZnO Nanorod Arrays for High-Temperature Photodetection

    Lien, W., Tsai, D., Chiu, S., Senesky, D. G., Maboudian, R., Pisano, A. P. & He, J., Nov 2011, In: IEEE Electron Device Letters. 32, 11, p. 1564-1566 6022746.

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

    Scopus citations: 31
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  3. Efficiency enhancement of InGaN-based multiple quantum well solar cells employing antireflective ZnO nanorod arrays

    Lin, G. J., Lai, K. Y., Lin, C. A., Lai, Y. & He, J. H., Aug 2011, In: IEEE Electron Device Letters. 32, 8, p. 1104-1106 5930323.

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

    Scopus citations: 27
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  4. Published

    Subthreshold characteristics of MOS transistors with CeO2La 2O3 stacked gate dielectric

    Wong, H., Yang, B. L., Kakushima, K. & Iwai, H., Aug 2011, In: IEEE Electron Device Letters. 32, 8, p. 1002-1004 5898389.

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

    Scopus citations: 13
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  5. Origin of Hot Carriers in InGaN-Based Quantum-Well Solar Cells

    Lai, K. Y., Lin, G. J., Chen, C., Lai, Y. & He, J. H., Feb 2011, In: IEEE Electron Device Letters. 32, 2, p. 179-181 5671457.

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

    Scopus citations: 24
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  6. 2010
  7. Published

    Fermi-level pinning at metal/high-k interface influenced by electron state density of metal gate

    Yang, Z. C., Huang, A. P., Zheng, X. H., Xiao, Z. S., Liu, X. Y., Zhang, X. W., Chu, P. K., & 1 othersWang, W. W., Oct 2010, In: IEEE Electron Device Letters. 31, 10, p. 1101-1103 5560726.

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

    Scopus citations: 11
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  8. 2008

  9. A single-crystal-silicon bulk-acoustic-mode microresonator oscillator

    Lee, J. E., Bahreyni, B., Zhu, Y. & Seshia, A. A., Jul 2008, In: IEEE Electron Device Letters. 29, 7, p. 701-703

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

    Scopus citations: 58
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  10. 1998
  11. Published

    Fabrication of low dielectric constant materials for ULSI multilevel interconnection by plasma ion implantation

    Qin, S., Zhou, Y., Chan, C. & Chu, P. K., Nov 1998, In: IEEE Electron Device Letters. 19, 11, p. 420-422

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

    Scopus citations: 10
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  12. 1990

  13. Amorphous Carbon Films as Planarization Layers Deposited by Plasma-Enhanced Chemical Vapor Deposition

    Pang, S. W. & Horn, M. W., Sep 1990, In: IEEE Electron Device Letters. 11, 9, p. 391-393

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

    Scopus citations: 6
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