IEEE Electron Device Letters

IEEE Electron Device Letters

ISSNs: 0741-3106, 0193-8576

Additional searchable ISSN (Electronic): 1558-0563

Institute of Electrical and Electronics Engineers, United States

Scopus rating (2019): CiteScore 7.4 SJR 1.397 SNIP 1.633

Journal

Journal Metrics

Research Output

  1. 2020
  2. Published

    Stable Hysteresis-Free MoS2 Transistors with Low-k/High-k Bilayer Gate Dielectrics

    Zhang, Z., Su, M., Li, G., Wang, J., Zhang, X., Ho, J. C., Wang, C. & 3 others, Wan, D., Liu, X. & Liao, L., Jul 2020, In : IEEE Electron Device Letters. 41, 7, p. 1036-1039

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

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  3. Published

    Equivalent Circuit of Quantum-Dot LED and Acquisition of Carrier Lifetime in Active Layer

    Xiao, H., Wang, K., Wang, R., Chen, W. & Chiang, K. S., Jan 2020, In : IEEE Electron Device Letters. 41, 1, p. 87-90 8907889.

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

    Scopus citations: 2
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  4. 2018
  5. Published

    A Compact and Low-Loss Bandpass Filter Using Self-Coupled Folded-Line Resonator With Capacitive Feeding Technique

    Hou, Z. J., Yang, Y., Zhu, X., Li, Y. C., Dutkiewicz, E. & Xue, Q., Oct 2018, In : IEEE Electron Device Letters. 39, 10, p. 1584-1587

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

    Scopus citations: 7
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  6. Published

    Wideband Millimeter-Wave On-Chip Quadrature Coupler with Improved In-Band Flatness in 0.13-μm SiGe Technology

    Hou, Z. J., Yang, Y., Chiu, L., Zhu, X. & Xue, Q., May 2018, In : IEEE Electron Device Letters. 39, 5, p. 652-655

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

    Scopus citations: 3
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  7. 2017
  8. Published

    Compact On-Chip Bandpass Filter with Improved In-Band Flatness and Stopband Attenuation in 0.13-μm (Bi)-CMOS Technology

    Yang, Y., Liu, H., Hou, Z. J., Zhu, X., Dutkiewicz, E. & Xue, Q., Oct 2017, In : IEEE Electron Device Letters. 38, 10, p. 1359-1362 8010269.

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

    Scopus citations: 27
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  9. Published

    Flexible Low-Power Organic Complementary Inverter Based on Low-k Polymer Dielectric

    Liu, J., Gao, X., Xu, J., Ruotolo, A. & Wang, S., Oct 2017, In : IEEE Electron Device Letters. 38, 10, p. 1461-1464 8004420.

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

    Scopus citations: 2
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  10. Device Process and Circuit Application Interaction for Harsh Electronics: Hf-In-Zn-O Thin Film Transistors as an Example

    Ho, C., Tsai, D., Lu, C., Kim, S. Y., Mungan, S., Yang, S., Zhang, Y. & 1 others, He, J., Aug 2017, In : IEEE Electron Device Letters. 38, 8, p. 1039-1042 7959154.

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

    Scopus citations: 4
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  11. Published

    An On-Chip Bandpass Filter Using a Broadside-Coupled Meander Line Resonator with a Defected-Ground Structure

    Zhong, Y., Yang, Y., Zhu, X., Dutkiewicz, E., Shum, K. M. & Xue, Q., 1 May 2017, In : IEEE Electron Device Letters. 38, 5, p. 626-629 7891020.

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

    Scopus citations: 48
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  12. 2016
  13. Published

    Tungsten-Doped Nb2O5 Nanorod Sensor for Toxic and Combustible Gas Monitoring Applications

    Yu, J., Cheung, K. W., Yan, W. H. & Ho, D., 1 Sep 2016, In : IEEE Electron Device Letters. 37, 9, p. 1223-1226 7506233.

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

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  14. Published

    A broadside-coupled meander-line resonator in 0.13-μm SiGe technology for millimeter-wave application

    Chakraborty, S., Yang, Y., Zhu, X., Sevimli, O., Xue, Q., Esselle, K. & Heimlich, M., 1 Mar 2016, In : IEEE Electron Device Letters. 37, 3, p. 329-332 7390000.

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

    Scopus citations: 53
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  15. 2015
  16. Galvanic Effect of Au-Ag Electrodes for Conductive Bridging Resistive Switching Memory

    Kuo, C. C., Chen, I. C., Shih, C. C., Chang, K. C., Huang, C. H., Chen, P. H., Chang, T. & 3 others, Tsai, T. M., Chang, J. S. & Huang, J. C., Dec 2015, In : IEEE Electron Device Letters. 36, 12, p. 1321-1324 7312919.

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

    Scopus citations: 24
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  17. Surface-Controlled Metal Oxide Resistive Memory

    Ke, J., Namura, K., Retamal, J. R., Ho, C., Minamitake, H., Wei, T., Tsai, D. & 3 others, Lin, C., Suzuki, M. & He, J., Dec 2015, In : IEEE Electron Device Letters. 36, 12, p. 1307-1309 7310859.

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

    Scopus citations: 5
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  18. 2013
  19. Published

    A horseshoe micromachined resonant magnetic field sensor with high quality factor

    Zhang, W. & Lee, J. E., Oct 2013, In : IEEE Electron Device Letters. 34, 10, p. 1310-1312 6595578.

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

    Scopus citations: 18
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  20. Published

    Stability and low-frequency noise in InAs NW parallel-array thin-film transistors

    Wahl, R. E., Wang, F., Chung, H. E., Kunnen, G. R., Yip, S., Lee, E. H., Pun, E. Y. B. & 3 others, Raupp, G. B., Allee, D. R. & Ho, J. C., 2013, In : IEEE Electron Device Letters. 34, 6, p. 765-767 6515612.

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

    Scopus citations: 8
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  21. 2012
  22. 4H-SiC Metal-Semiconductor-Metal Ultraviolet Photodetectors in Operation of 450 °c

    Lien, W., Tsai, D., Lien, D., Senesky, D. G., He, J. & Pisano, A. P., Nov 2012, In : IEEE Electron Device Letters. 33, 11, p. 1586-1588 6329395.

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

    Scopus citations: 45
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  23. Photocarrier Relaxation Behavior of a Single ZnO Nanowire UV Photodetector: Effect of Surface Band Bending

    Chen, M., Retamal, J. R. D., Chen, C. & He, J., Mar 2012, In : IEEE Electron Device Letters. 33, 3, p. 411-413 6144690.

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

    Scopus citations: 45
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  24. Published

    Thermoelastic dissipation in etch-hole filled Lamé bulk-mode silicon microresonators

    Tu, C. & Lee, J. E., Mar 2012, In : IEEE Electron Device Letters. 33, 3, p. 450-452 6144691.

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

    Scopus citations: 11
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  25. Published

    Reversed nonlinear oscillations in lamé-mode single-crystal-silicon microresonators

    Zhu, H. & Lee, J. E., 2012, In : IEEE Electron Device Letters. 33, 10, p. 1492-1494 6291747.

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

    Scopus citations: 6
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  26. 2011
  27. Low-Temperature, Ion Beam-Assisted SiC Thin Films With Antireflective ZnO Nanorod Arrays for High-Temperature Photodetection

    Lien, W., Tsai, D., Chiu, S., Senesky, D. G., Maboudian, R., Pisano, A. P. & He, J., Nov 2011, In : IEEE Electron Device Letters. 32, 11, p. 1564-1566 6022746.

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

    Scopus citations: 28
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  28. Efficiency enhancement of InGaN-based multiple quantum well solar cells employing antireflective ZnO nanorod arrays

    Lin, G. J., Lai, K. Y., Lin, C. A., Lai, Y. & He, J. H., Aug 2011, In : IEEE Electron Device Letters. 32, 8, p. 1104-1106 5930323.

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

    Scopus citations: 25
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