Applied Physics Letters

Applied Physics Letters

ISSNs: 0003-6951

Additional searchable ISSN (Electronic): 1077-3118

AMER INST PHYSICS, United States

Scopus rating (2018): CiteScore 3.58 SJR 1.331 SNIP 1.212

Journal

Journal Metrics

Research Output

  1. 1991
  2. Analysis of pseudomorphic GaAs/InGaAs/AlGaAs modulation-doped field-effect transistor structures by secondary-ion mass spectrometry and ion channeling

    Chan, K. T., Kirschbaum, C. L. & Yu, K. M., 1991, In : Applied Physics Letters. 58, 12, p. 1305-1307

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review

    Scopus citations: 1
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  3. Breakdown of crystallinity in low-temperature-grown GaAs layers

    Liliental-Weber, Z., Swider, W., Yu, K. M., Kortright, J., Smith, F. W. & Calawa, A. R., 1991, In : Applied Physics Letters. 58, 19, p. 2153-2155

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review

    Scopus citations: 98
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  4. Experimental studies of proton-exchanged lithium niobate waveguides using cinnamic acid

    Pun, E. Y. B., Loi, K. K., Zhao, S. A. & Chung, P. S., 1991, In : Applied Physics Letters. 59, 6, p. 662-664

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review

    Scopus citations: 2
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  5. Lattice site locations of excess arsenic atoms in gallium arsenide grown by low-temperature molecular beam epitaxy

    Yu, K. M. & Liliental-Weber, Z., 1991, In : Applied Physics Letters. 59, 25, p. 3267-3269

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review

    Scopus citations: 16
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  6. Novel metal ion surface modification technique

    Brown, I. G., Godechot, X. & Yu, K. M., 1991, In : Applied Physics Letters. 58, 13, p. 1392-1394

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review

    Scopus citations: 118
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  7. Transition from lateral to transverse phase separation during film co-deposition

    Adams, C. D., Atzmon, M., Cheng, Y. & Srolovitz, D. J., 1991, In : Applied Physics Letters. 59, 20, p. 2535-2537

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review

    Scopus citations: 11
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  8. 1990
  9. Characterization of strained InGaAs single quantum well structures by ion beam methods

    Yu, K. M. & Chan, K. T., 1990, In : Applied Physics Letters. 56, 1, p. 45-47

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review

    Scopus citations: 15
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  10. Cross-section transmission electron microscopy study of carbon-implanted layers in silicon

    Wong, H., Lou, J., Cheung, N. W., Kvam, E. P., Yu, K. M., Olson, D. A. & Washburn, J., 1990, In : Applied Physics Letters. 57, 8, p. 798-800

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review

    Scopus citations: 28
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  11. Growth of in situ doped silicon epitaxial layer by rapid thermal processing

    Lee, S. K., Ku, Y. H., Hsieh, T. Y., Jung, K. H., Kwong, D. L., Spratt, D. & Chu, P., 1990, In : Applied Physics Letters. 57, 16, p. 1628-1630

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review

    Scopus citations: 1
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  12. Growth studies of pseudomorphic GaAs/InGaAs/AlGaAs modulation-doped field-effect transistor structures

    Chan, K. T., Lightner, M. J., Patterson, G. A. & Yu, K. M., 1990, In : Applied Physics Letters. 56, 20, p. 2022-2024

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review

    Scopus citations: 14
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  13. Ion channeling investigation of the lattice location of Sn atoms in GaAs thin films grown by molecular beam epitaxy

    Yu, K. M., Lee, H. P. & Wang, S., 1990, In : Applied Physics Letters. 56, 18, p. 1784-1786

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review

    Scopus citations: 4
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  14. 1989
  15. Shallow, silicided p+/n junction formation and dopant diffusion in SiO2/TiSi2/Si structure

    Ku, Y. H., Lee, S. K., Kwong, D. L. & Chu, P., 1989, In : Applied Physics Letters. 54, 17, p. 1684-1686

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review

    Scopus citations: 12
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  16. 1988
  17. Gettering of gold and copper with implanted carbon in silicon

    Wong, H., Cheung, N. W. & Chu, P. K., 1988, In : Applied Physics Letters. 52, 11, p. 889-891

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review

    Scopus citations: 74
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  18. Proximity gettering with mega-electron-volt carbon and oxygen implantations

    Wong, H., Cheung, N. W., Chu, P. K., Liu, J. & Mayer, J. W., 1988, In : Applied Physics Letters. 52, 12, p. 1023-1025

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review

    Scopus citations: 138
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  19. 1987
  20. Effects of interface reactions on electrical characteristics of metal-GaAs contacts

    Yu, K. M., Walukiewicz, W., Jaklevic, J. M., Haller, E. E. & Sands, T., 1987, In : Applied Physics Letters. 51, 3, p. 189-191

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review

    Scopus citations: 22
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  21. Nanometer-scale columns in GaAs fabricated by angled chlorine ion-beam-assisted etching

    Goodhue, W. D., Pang, S. W., Johnson, G. D., Astolfi, D. K. & Ehrlich, D. J., 1987, In : Applied Physics Letters. 51, 21, p. 1726-1728

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review

    Scopus citations: 8
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  22. 1983
  23. Fabrication of periodic Ti: LiNbO3 waveguides by single and double diffusion

    Yi-Yan, A., Andonovic, I., Pun, E. Y. B. & Bjortorp, B., 1983, In : Applied Physics Letters. 43, 1, p. 19-21

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review

    Scopus citations: 4
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  24. 1982
  25. Interface state generation in the Si-SiO2 system by photoinjecting electrons from an Al field plate

    Pang, S., Lyon, S. A. & Johnson, W. C., 1982, In : Applied Physics Letters. 40, 8, p. 709-711

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review

    Scopus citations: 22
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  26. 1981
  27. Fabrication of periodic waveguides by ion exchange

    Pun, E. Y. B. & Yi-Yan, A., 1981, In : Applied Physics Letters. 38, 9, p. 673-674

    Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review

    Scopus citations: 4
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